It was investigated the possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency versus normalized bias current. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 related to increasing influence of quantum corrections to conductivity of superconductors and, in its turn, to decreasing electron diffusion coefficient. The best samples has constant value of system quantum effi-ciency 94% at Ib/Ic~0.8 and wavelength 1.31 mkm.
Tungsten Germanide Superconducting Nanowire Single-Photon Detectors with Saturated Internal Detection Efficiency at Wavelengths up to 29 μm
National Institute of Standards and Technology(美国国家标准与技术研究院);University of Colorado Boulder(科罗拉多大学博尔德分校);University of Glasgow(格拉斯哥大学);Jet Propulsion Laboratory, California Institute of Technology(加州理工学院喷气推进实验室);Max Planck Institute for Multidisciplinary Sciences(马克斯·普朗克多学科科学研究所);JP Analytical(JP分析公司)
Improvements of readout signal integrity in mid-infrared superconducting nanowire single photon detectors
Jet Propulsion Laboratory, California Institute of Technology(加州理工学院喷气推进实验室);Research Laboratory of Electronics, Massachusetts Institute of Technology(麻省理工学院电子研究实验室);Electrical and Computer Engineering, Northeastern University(东北大学电气与计算机工程系)
Improved Cryogenic Photodiode Optical Biasing for Low-Noise and Low-Jitter Superconducting Nanowire Single-Photon Detectors
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS)(集成电路材料重点实验室,中国科学院上海微系统与信息技术研究所);Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences(超导集成电路技术上海市重点实验室,中国科学院上海微系统与信息技术研究所);Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences(中国科学院大学材料科学与光电工程学院);State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, and FST ECE, University of Macau(模拟与混合信号超大规模集成电路国家重点实验室,澳门大学微电子研究所及理学院电子计算机工程)