应变硅纳米线光电导响应的Monte Carlo研究
Photoconductive response of strained silicon nanowires: A Monte Carlo study
摘要：
采用Energy-Monte Carlo蒙特卡罗模拟方法研究了直径为3.1 nm、长500 nm的应变[110]硅纳米线的光电流。观察到基于该纳米线的光电晶体管对于532 nm的输入光波长和0.25-2.5 kW/cm 2的强度可以具有大约21.3 mA/W的响应度。光电导与输入光强度的超单位斜率为1.2，表明纳米线具有光电导增益，并突出了其优于具有亚单位斜率（0.77）的锗纳米线的优势。产生的光电流在0.1 nA-1 nA范围内。分别采用密度泛函理论（DFT）和紧束缚（TB）方法进行应变应用和能带结构计算。在计算载流子-声子散射事件时，同时考虑了纵向声学声子和光学声子，纵向光学声子的作用强两个数量级。
英文摘要：
Using Ensemble Monte Carlo simulations the photocurrent in a 500nm long strained [110] silicon nanowire with diameter of 3.1 nm is investigated. It was observed that a phototransistor based on this nanowire can have responsivities in the order of 21.3 mA/W for an input light wavelength of 532 nm and intensity of 0.25-2.5 kW/cm2. The super-unity slope of 1.2 in photo conductance versus input light intensity suggests that the nanowire has a photoconductive gain and highlights its advantage over germanium nanowires with sub-unity slope (0.77). The generated photocurrents are in the 0.1 nA-1 nA range. Density Functional Theory (DFT) and Tight Binding (TB) methods were used for strain application and band structure calculation, respectively. Both longitudinal acoustic and optical phonons were included in the calculation of the carrier-phonon scattering events, which showed a two-order of magnitude stronger role for longitudinal optical phonons.
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