We introduce a simple but efficient electronic fitness function (EFF) that describes the electronic aspect of the thermoelectric performance. This EFF finds materials that overcome the inverse relationship between $σ$ and $S$ based on the complexity of the electronic structures regardless of specific origin (e.g., isosurface corrugation, valley degeneracy, heavy-light bands mixture, valley anisotropy or reduced dimensionality). This function is well suited for application in high throughput screening. We applied this function to 75 different thermoelectric and potential thermoelectric materials including full- and half-Heuslers, binary semiconductors and Zintl phases. We find an efficient screening using this transport function. The EFF identifies known high performance $p$- and $n$-type Zintl phases and half-Heuslers. In addition, we find some previously unstudied phases with superior EFF.
High-throughput calculations are a very promising tool for screening a large number of compounds in order to discover new useful materials. Ternary intermetallic are thus investigated in the present work to find new compounds potentially interesting for thermoelectric applications. The screening of the stable non-metallic compounds required for such applications is obtained by calculating their electronic structure by DFT methods. In a first part, the study of the density of states at the Fermi level of well-known chemical elements and binary compounds allows to empirically optimize the select…
The discovery of novel materials for thermoelectric energy conversion has potential to be accelerated by data-driven screening combined with high-throughput calculations. One way to increase the efficacy of successfully choosing a candidate material is through its evaluation using transport descriptors. Using a data-driven screening, we selected 12 potential candidates in the trigonal ABX2 family, followed by charge transport property simulations from first principles. The results suggest that carrier scattering processes in these materials are dominated by ionised impurities and polar optical…
The high-throughput (HT) computational method is a useful tool to screen high performance functional materials. In this work, using the deformation potential method under the single band model, we evaluate the carrier relaxation time and establish an electrical descriptor (\c{hi}) characterized by the carrier effective masses based on the simple rigid band approximation. The descriptor (\c{hi}) can be used to reasonably represent the maximum power factor without solving the electron Boltzmann transport equation. Additionally, the Grüneisen parameter (γ), a descriptor of the lattice anharmonici…
Half-Heusler phases have gained recently much interest as thermoelectric materials. Screening of possible systems was performed by ab-initio simulation using VASP-software. The energy-versus-Volume (E(V)) curves were calculated and calibrated. For TiCoSb, NbNiSn, FeMoSb the stability of Half-Heusler phase against concurrent crystal structures like TiNiSi, ZrCoAl, ZrBeSi, FeSiV, ZrNiP and Full Heusler was confirmed. However, the thermo-dynamical driving force as calculated from the difference in lattice energies is less than 0.1eV/atom. Hence, the fabrication of Half Heusler phases is a challen…
The thermoelectric transport coefficients of electrons in two recently emerged transition metal dichalcogenides(TMD), MoS2 and WSe2, are calculated by solving Boltzmann Transport equation and coupled electrical and thermal current equations using Rode iterative technique. Scattering from localized donor impurities, acoustic deformation potential, longitudinal optical (LO) phonons, and substrate induced remote phonon modes are taken into account. Hybridization of TMD plasmon with remote phonon modes is investigated. Dynamic screening under linear polarization response is explored in TMDs sittin…
Recent discovery of new materials for thermoelectric energy conversion is enabled by efficient prediction of materials' performance from first-principles, without empirically fitted parameters. The novel simplified approach for computing electronic transport properties is described, which achieves good accuracy and transferability while greatly reducing complexity and computation cost compared to the existing methods. The first-principles calculations of the electron-phonon coupling demonstrate that the energy dependence of the electron relaxation time varies significantly with chemical compos…
A finite electronic band gap is a standard filter in high-throughput screening of materials using density functional theory (DFT). However, because of the systematic underestimation of band gaps in standard DFT approximations, a number of compounds may incorrectly be predicted metallic. In a more accurate treatment, such materials may instead appear as low band gap materials and could e.g. have good thermoelectric properties if suitable doping is feasible. To explore this possibility, we performed hybrid functional calculations on 1093 cubic materials listed in the MaterialsProjects database w…
Thermoelectric materials can be used to construct devices which recycle waste heat into electricity. However, the best known thermoelectrics are based on rare, expensive or even toxic elements, which limits their widespread adoption. To enable deployment on global scales, new classes of effective thermoelectrics are thus required. $\textit{Ab initio}$ models of transport properties can help in the design of new thermoelectrics, but they are still too computationally expensive to be solely relied upon for high-throughput screening in the vast chemical space of all possible candidates. Here, we …
The presence of lone pair (LP) electrons is strongly associated with the disruption of lattice heat transport, which is a critical component of strategies to achieve efficient thermoelectric energy conversion. By exploiting an empirical relationship between lattice thermal conductivity $κ_L$ and the bond angles of pnictogen group LP cation coordination environments, we develop an inverse design strategy based on a materials database screening to identify chalcogenide materials with ultralow $κ_L$ for thermoelectrics. Screening the $\sim$ 635,000 real and hypothetical inorganic crystals of the …
The predictive performance screening of novel compounds can significantly promote the discovery of efficient, cheap, and non-toxic thermoelectric materials. Large efforts to implement machine-learning techniques coupled to materials databases are currently being undertaken, but the adopted computational methods can dramatically affect the outcome. With regards to electronic transport and power factor calculations, the most widely adopted and computationally efficient method, is the constant relaxation time approximation (CRT). This work goes beyond the CRT and adopts the proper, full energy an…
Within 4 different crystal structures, 2280 ternary intermetallic configurations have been investigated via high-throughput density functional theory calculations in order to discover new semiconducting materials. The screening is restricted to intermetallics with the equimolar composition TMX, where T is a transition metal from the Ti, V, Cr columns, Sr, Ba, Y and La, M an element from the first line of transition metals and X a sp elements (Al, P, Si, Sn and Sb), i.e. to a list of 24 possible elements. Since the calculations are done combinatorically, every possible ternary composition is co…
In this work, we first perform a systematic search for high-efficiency three-dimensional (3D) and two-dimensional (2D) thermoelectric materials by combining semiclassical transport techniques with density functional theory (DFT) calculations and then train machine-learning models on the thermoelectric data. Out of 36000 three-dimensional and 900 two-dimensional materials currently in the publicly available JARVIS-DFT database, we identify 2932 3D and 148 2D promising thermoelectric materials using a multi-steps screening procedure, where specific thresholds are chosen for key quantities like b…
Compounds of low lattice thermal conductivity (LTC) are essential for seeking thermoelectric materials with high conversion efficiency. Some strategies have been used to decrease LTC. However, such trials have yielded successes only within a limited exploration space. Here we report the virtual screening of a library containing 54,779 compounds. Our strategy is to search the library through Bayesian optimization using for the initial data the LTC obtained from first-principles anharmonic lattice dynamics calculations for a set of 101 compounds. We discovered 221 materials with very low LTC. Tw…
Machine learning techniques are used to explore the intrinsic origins of the hydrodynamic thermal transport and to find new materials interesting for science and engineering. The hydrodynamic thermal transport is governed intrinsically by the hydrodynamic scale and the thermal conductivity. The correlations between these intrinsic properties and harmonic and anharmonic properties, and a large number of compositional (290) and structural (1224) descriptors of 131 crystal compound materials are obtained, revealing some of the key descriptors that determines the magnitude of the intrinsic hydrody…
Chemical doping is one of the most important strategies for tuning electrical properties of semiconductors, particularly thermoelectric materials. Generally, the main role of chemical doping lies in optimizing the carrier concentration, but there can potentially be other important effects. Here, we show that chemical doping plays multiple roles for both electron and phonon transport properties in half-Heusler thermoelectric materials. With ZrNiSn-based half-Heusler materials as an example, we use high-quality single and polycrystalline crystals, various probes, including electrical transport m…
Identifying Highly Deformable van der Waals Layered Chalcogenides with Superior Thermoelectric Performance Using Deformability Factors and Interpretable Machine Learning
Semiconducting half- and, to a lesser extent, full-Heusler compounds are promising thermoelectric materials due to their compelling electronic properties with large power factors. However, intrinsically high thermal conductivity resulting in a limited thermoelectric efficiency has so far impeded their widespread use in practical applications. Here, we report the computational discovery of a class of hitherto unknown stable semiconducting full-Heusler compounds with ten valence electrons ($X_2YZ$, $X$=Ca, Sr, and Ba; $Y$= Au and Hg; $Z$=Sn, Pb, As, Sb, and Bi) through high-throughput $ab-initio…
We theoretically investigate the thermoelectric properties of semiconducting (gapped) materials by varying the degrees of polynomials in their energy dispersion relations, in which either the valence or conduction energy dispersion depends on the wave vector raised to the power of two, four, and six. The thermoelectric transport coefficients such as the Seebeck coefficient, electrical conductivity, and thermal conductivity are calculated within the linearized Boltzmann transport theory combined with the relaxation time approximation. We consider various effects such as band gaps, dimensionalit…
We present a simple and efficient approximation to the electron-phonon scattering rate suitable for high-throughput screening of candidate materials for thermoelectric devices, based on electronic transport. The method is applied to calculate the electronic transport coefficients of half-Heusler compounds, showing agreement with experimental data. By directly computing electrical and the electronic part of the thermal conductivities, we find deviations from the Wiedemann-Franz law in these compounds at high temperatures and low carrier concentrations.
Nanostructured semiconducting materials are promising candidates for thermoelectrics due to their potential to suppress phonon transport while preserving electrical properties. Modeling phonon-boundary scattering in complex geometries is crucial for predicting materials with high conversion efficiency. However, the simultaneous presence of ballistic and diffusive phonons challenges the development of models that are both accurate and computationally tractable. Using the recently developed first-principles Boltzmann transport equation (BTE) approach, we investigate diffusive phonons in nanomate…
Efficient ab initio computational methods for the calculation of thermoelectric transport properties of materials are of great avail for energy harvesting technologies. The BoltzTraP code has been largely used to efficiently calculate thermoelectric coefficients. However, its current version that is publicly available is based only on the constant relaxation time (RT) approximation, which usually does not hold for real materials. Here, we extended the implementation of the BoltzTraP code by incorporating realistic k-dependent RT models of the temperature dependence of the main scattering proce…
The factors that affect the thermal conductivity of semiconductors is a topic of great scientific interest, especially in relation to thermoelectrics. Key developments have been the concept of the phonon-glass-electron-crystal (PGEC) and the related idea of rattling to achieve this. We use first principles phonon and thermal conductivity calculations in order to explore the concept of rattling for stoichiometric ordered half-Heusler compounds. These compounds can be regarded as filled zinc blende materials, and the filling atom could be viewed as a rattler if it is weakly bound. We use two sim…
In this study, we implemented a finite-difference algorithm for computing anomalous Hall and Nernst conductivity. Based on the expression to evaluate the Berry curvature in an insulating system [J. Phys. Soc. Jpn. 74 1674(2005)], we extended the methods to a metallic system. We calculated anomalous Hall conductivity and Nernst conductivity in a two-dimensional ferromagnetic material FeCl$_2$ and three-dimensional ferromagnetic transition metals bcc-Fe, hcp-Co, and fcc-Ni. Our results are comparable to previously reported results computed by Kubo-formula or Wannier representation. To evaluate a…
The electronic transport behaviour of materials determines their suitability for technological applications. We develop an efficient method for calculating carrier scattering rates of solid-state semiconductors and insulators from first principles inputs. The present method extends existing polar and non-polar electron-phonon coupling, ionized impurity, and piezoelectric scattering mechanisms formulated for isotropic band structures to support highly anisotropic materials. We test the formalism by calculating the electronic transport properties of 16 semiconductors and comparing the results ag…
The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as OLED or thermoelectrics. These excitonic semiconductors typically reach the degenerate limit only at impurity concentrations of 5-10\%, a phenomenon that has been put in relation to the strong Coulomb binding between charge carriers and ionized dopants, and whose comprehension remained elusive so far. This study proposes a general mechanism for the release of carriers at finite doping in terms of collective screening phenomena. A multiscale…
Proof-Carrying Materials: Falsifiable Safety Certificates for Machine-Learned Interatomic Potentials
Indian Institute of Information Technology Allahabad (IIITA), Prayagraj, India（阿拉哈巴德印度信息技术学院（IIITA），普拉亚格拉杰，印度）；National Institute of Electronics and Information Technology (NIELIT), India（国家电子与信息技术研究所（NIELIT），印度）
In this paper we assess the predictive power of the self-consistent hybrid functional scPBE0 in calculating the band gap of oxide semiconductors. The computational procedure is based on the self-consistent evaluation of the mixing parameter $α$ by means of an iterative calculation of the static dielectric constant using the perturbation expansion after discretization (PEAD) method and making use of the relation $α= 1/ε_{\infty}$. Our materials dataset is formed by 30 compounds covering a wide range of band gaps and dielectric properties, and includes materials with a wide spectrum of applicati…
Dielectric screening plays an important role in reducing the strength of carrier scattering and trapping by point defects for many semiconductors such as the halide perovskite solar materials. However, it was rarely considered as a screen to find new electronic semiconductors. We performed a material search study using the dielectric properties as a screen to identify potential electronic materials in the class of metal-pnictide ternary sulfosalts, containing Bi or Sb. These salts are basically ionic due to the electronegativity difference between the S and both the metal and pnictogen element…
