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arXiv 1706.03239cond-mat.str-elcond-mat.mtrl-sci
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二维本征铁磁半导体CrGeTe3的三临界行为

Tricritical behavior of two-dimensional intrinsic ferromagnetic semiconducting CrGeTe3

G. T. Lin, H. L. Zhuang, X. Luo, B. J. Liu, F. C. Chen, J. Yan, Y. Sun, J. Zhou, W. J. Lu, P. Tong, Z. G. Sheng, Z. Qu, W. H. Song, X. B. Zhu, Y. P. Sun

摘要:

CrGeTe 3是一种新型的二维铁磁半导体材料,在自旋电子学器件中有着广阔的应用前景。与CrSiTe 3的磁性可以用二维-伊辛模型来理解不同,CrGeTe 3具有较小的范德华能隙和较大的解理能,这可能导致磁性机制从二维向三维转变。为了证实这一推测,我们调查的临界行为CrGeTe 3周围的第二阶顺磁-铁磁相变。通过修正的Arrott图、Kouvel-Fisher方法和临界等温线分析等实验方法计算了CrGeTe 3的临界指数,结果表明,在居里温度为67.9 K时,CrGeTe 3的磁性符合三临界平均场模型,其临界指数\b{eta}、γ和δ分别为0.240、1.000和5.070。因此,我们认为CrGeTe_3从二维到三维的磁相变应该位于三临界点附近。我们的实验直接证明了三临界平均场模型对二维铁磁半导体的适用性。

英文摘要:

CrGeTe3 recently emerges as a new two-dimensional (2D) ferromagnetic semiconductor that is promising for spintronic device applications. Unlike CrSiTe3 whose magnetism can be understood using the 2D-Ising model, CrGeTe3 exhibits a smaller van der Waals gap and larger cleavage energy, which could lead to a transition of magnetic mechanism from 2D to 3D. To confirm this speculation, we investigate the critical behavior CrGeTe3 around the second-order paramagnetic-ferromagnetic phase transition. We obtain the critical exponents estimated by several common experimental techniques including the modified Arrott plot, Kouvel-Fisher method and critical isotherm analysis, which show that the magnetism of CrGeTe3 follows the tricritical mean-field model with the critical exponents \b{eta}, γ, and δ of 0.240, 1.000, and 5.070, respectively, at the Curie temperature of 67.9 K. We therefore suggest that the magnetic phase transition from 2D to 3D for CrGeTe3 should locate near a tricritical point. Our experiment provides a direct demonstration of the applicability of the tricritical mean-field model to a 2D ferromagnetic semiconductor.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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