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arXiv 1705.09481physics.ins-det
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分子添加剂存在下氙基光学薄膜晶体的微观模拟

Microscopic simulation of xenon-based optical TPCs in the presence of molecular additives

C. D. R. Azevedo, D. Gonzalez-Diaz, S. F. Biagi, C. A. B. Oliveira, C. A. O. Henriques, J. Escada, F. Monrabal, J. J. Gómez-Cadenas, V. Álvarez, J. M. Benlloch-… 展开作者

C. D. R. Azevedo, D. Gonzalez-Diaz, S. F. Biagi, C. A. B. Oliveira, C. A. O. Henriques, J. Escada, F. Monrabal, J. J. Gómez-Cadenas, V. Álvarez, J. M. Benlloch-Rodríguez F. I. G. M. Borges, A. Botas, S. Cárcel, J. V. Carrión, S. Cebrián, C. A. N. Conde, J. Díaz, M. Diesburg, R. Esteve, R. Felkai, L. M. P. Fernandes, P. Ferrario, A. L. Ferreira, E. D. C. Freitas, A. Goldschmidt, R. M. Gutiérrez, J. Hauptman, A. I. Hernandez, J. A. Hernando Morata, V. Herrero, B. J. P. Jones, L. Labarga, A. Laing, P. Lebrun, I. Liubarsky, N. Lopez-March, M. Losada, J. Martín-Albo, A. Martínez, A. D. McDonald, C. M. B. Monteiro, F. J. Mora, L. M. Moutinho, J. Muñoz Vidal, M. Musti, M. Nebot-Guinot, P. Novella, D. Nygren, B. Palmeiro, A. Para, J. Pérez, M. Querol, J. Renner, L. Ripoll, J. Rodríguez, L. Rogers, F. P. Santos, J. M. F. dos Santos, L. Serra, D. Shuman, A. Simón, C. Sofka, M. Sorel, T. Stiegler, J. F. Toledo, J. Torrent, Z. Tsamalaidze, J. F. C. A. Veloso, R. Webb, J. T. White, N. Yahlali

摘要:

介绍了一种模拟氙基气体光学时间投影室(OTPC)中高能和低能电子输运的框架。模拟依赖于基本的截面(电子-原子和电子-分子),并结合,为了计算气体闪烁,反应/猝灭率(原子-原子和原子-分子)的前41个激发态的氙和相关的相关准分子,连同它们的辐射级联。结果与纯氙及其与CO $_2$和CF $_4$的混合物在0.1 ~ 10 bar压力范围内的观测结果进行了比较。这项工作揭示了一些光的基本过程中负责的主要和次要的氙闪烁机制的存在下的添加剂,这是感兴趣的OTPC技术。

英文摘要:

We introduce a simulation framework for the transport of high and low energy electrons in xenon-based gaseous optical time projection chambers (OTPCs). The simulation relies on elementary cross sections (electron-atom and electron-molecule) and incorporates, in order to compute the gas scintillation, the reaction/quenching rates (atom-atom and atom-molecule) of the first 41 excited states of xenon and the relevant associated excimers, together with their radiative cascade. The results compare positively with observations made in pure xenon and its mixtures with CO$_2$ and CF$_4$ in a range of pressures from 0.1 to 10~bar. This work sheds some light on the elementary processes responsible for the primary and secondary xenon-scintillation mechanisms in the presence of additives, that are of interest to the OTPC technology.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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