双曲衬底冷却的石墨烯Zener-Klein晶体管
A graphene Zener-Klein transistor cooled by a hyperbolic substrate
摘要：
冷却机制的工程化是纳米电子学中的瓶颈。尽管扩散石墨烯中的热交换主要由缺陷辅助的声学声子散射驱动，但六方氮化硼（hBN）上的高迁移率石墨烯的情况完全不同，其中来自衬底的远程声子的贡献显著。在具有局部栅极的hBN晶体管上的双层石墨烯在其中通过在高偏压下补偿载流子密度和Zener-Klein隧穿（ZKT）的降低来实现几乎完美的电流饱和的状态下被驱动。使用噪声测温，我们表明，这种齐纳-克莱因隧道触发一个新的冷却途径，由于双曲声子极化激元（HPP）的发射hBN的超普朗克制度以外的平衡电子-空穴对。ZKT传输和HPP冷却的组合促进了BN晶体管上的石墨烯作为功率器件和RF电子器件的有价值的纳米技术。
英文摘要：
Engineering of cooling mechanisms is a bottleneck in nanoelectronics. Whereas thermal exchanges in diffusive graphene are mostly driven by defect assisted acoustic phonon scattering, the case of high-mobility graphene on hexagonal Boron Nitride (hBN) is radically different with a prominent contribution of remote phonons from the substrate. A bi-layer graphene on hBN transistor with local gate is driven in a regime where almost perfect current saturation is achieved by compensation of the decrease of the carrier density and Zener-Klein tunneling (ZKT) at high bias. Using noise thermometry, we show that this Zener-Klein tunneling triggers a new cooling pathway due to the emission of hyperbolic phonon polaritons (HPP) in hBN by out-of-equilibrium electron-hole pairs beyond the super-Planckian regime. The combination of ZKT-transport and HPP-cooling promotes graphene on BN transistors as a valuable nanotechnology for power devices and RF electronics.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
