P型二维铁磁半导体的衬底增强策略

中文摘要 AI 辅助

自旋晶体管通过静电门控同时调控其电荷和自旋特性，被认为具有广泛应用的潜力，然而由于其物理基础——磁性半导体——极为稀缺，这一目标实现起来颇具挑战。磁性半导体仅限于少数几种体系，包括稀磁半导体（DMS）和二维铁磁半导体（2D-FMS），并且已知其电学和/或磁学性质的门控可调性不足。在此，我们展示了一种衬底工程范式，通过将少层Cr$_{2}$Ge$_{2}$Te$_{6}$（FL-CGT）与反铁磁绝缘体CrOCl界面结合。得益于微妙的界面电荷转移耦合，CGT可以从双极性半导体显著转变为高性能P型半导体。当冷却至居里温度以下时，这种衬底增强的铁磁半导体场效应晶体管（FET）的开关比达到10$^{5}$，其磁滞回线的矫顽场$H_{c}$可调因子超过200$\%$，从而在原型半导体自旋晶体管架构中实现了门控辅助磁开关。在重空穴掺杂下，进一步观察到从临界幂律标度到双幂律行为的交叉。我们的发现表明，计算支持的高效界面电荷转移和电调控磁各向异性能。这种高性能P型FMS-FET体系表明，主动衬底增强范式可能是未来门控可调自旋电子器件研究的一条有力途径。

英文摘要

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

发表机构

• School of Information Science and Engineering, Shandong University（山东大学信息科学与工程学院）
• Liaoning Academy of Materials（辽宁省材料研究院）
• State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University（山西大学光电研究所量子光学与量子光学器件国家重点实验室）
• Collaborative Innovation Center of Extreme Optics, Shanxi University（山西大学极端光学协同创新中心）
• National and Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science & Technology, Hebei University（河北大学物理科学与技术学院新能源光电器件省部共建国家重点实验室培育基地）
• College of Sciences, Northeastern University（东北大学理学院）
• Research Center for Electronic and Optical Materials, National Institute for Materials Science（日本国立材料研究所电子与光学材料研究中心）
• Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences（中国科学院金属研究所沈阳材料科学国家研究中心）
• Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（日本国立材料研究所材料纳米结构研究中心）
• Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Materials Science and Engineering, Shanxi Normal University（山西师范大学材料科学与工程学院磁分子与磁信息材料教育部重点实验室）

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