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arXiv 1702.02804cond-mat.mes-hallcond-mat.supr-con
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半导体纳米线结的约瑟夫森辐射和散粒噪声

Josephson radiation and shot noise of a semiconductor nanowire junction

David J. van Woerkom, Alex Proutski, Ruben J. J. van Gulik, Tamás Kriváchy, Diana Car, Sèbastian R. Plissard, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Attila Geresdi

摘要:

利用交流耦合超导隧道结中的光子辅助准粒子隧穿效应测量了InSb半导体纳米线结的约瑟夫森辐射。我们通过评估纳米线结的非弹性库珀对隧穿的频率依赖性来量化局部微波环境的作用,并找到截止频率为$f_0=33.1\,$ GHz的零频率阻抗$Z(0)=492\,Ω$。我们提取的电路耦合效率的$η\approx 0.1$和探测器的量子效率接近统一的高频极限。除了约瑟夫森辐射,我们确定了一个散粒噪声的贡献与Fano因子$F\approx1$,一致的纳米线通道中存在的单电子态。

英文摘要:

We measured the Josephson radiation emitted by an InSb semiconductor nanowire junction utilizing photon assisted quasiparticle tunneling in an AC-coupled superconducting tunnel junction. We quantify the action of the local microwave environment by evaluating the frequency dependence of the inelastic Cooper-pair tunneling of the nanowire junction and find the zero frequency impedance $Z(0)=492\,Ω$ with a cutoff frequency of $f_0=33.1\,$GHz. We extract a circuit coupling efficiency of $η\approx 0.1$ and a detector quantum efficiency approaching unity in the high frequency limit. In addition to the Josephson radiation, we identify a shot-noise contribution with a Fano factor $F\approx1$, consistently with the presence of single electron states in the nanowire channel.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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