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arXiv 1702.02557cond-mat.mes-hall
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MgZnO/ZnO异质结构中的霍尔场致电阻振荡

Hall field-induced resistance oscillations in MgZnO/ZnO heterostructures

Q. Shi, M. A. Zudov, J. Falson, Y. Kozuka, A. Tsukazaki, M. Kawasaki, K. von Klitzing, J. Smet

摘要:

我们报告的非线性磁输运在二维电子气托管在MgZnO/ZnO异质结。应用直流电时,我们观察到明显的霍尔场致电阻振荡(HIRO),这是众所周知的高迁移率GaAs/AlGaAs量子阱的实验。HIRO对无序势的短程分量的独特敏感性使我们能够明确地确定,我们的MgZnO/ZnO异质结构的迁移率受到2D通道内或附近杂质的限制。证明HIRO可以实现在一个系统中具有更低的流动性,更高的密度,和更大的有效质量比以前研究的系统,突出了显着的普遍性的现象,其巨大的希望被用于各种新兴的二维材料的研究。

英文摘要:

We report on nonlinear magnetotransport in a two-dimensional electron gas hosted in a MgZnO/ZnO heterostructure. Upon application of a direct current, we observe pronounced Hall field-induced resistance oscillations (HIRO) which are well known from experiments on high-mobility GaAs/AlGaAs quantum wells. The unique sensitivity of HIRO to the short-range component of the disorder potential allows us to unambiguously establish that the mobility of our MgZnO/ZnO heterostructure is limited by impurities residing within or near the 2D channel. Demonstration that HIRO can be realized in a system with a much lower mobility, much higher density, and much larger effective mass than in previously studied systems, highlights remarkable universality of the phenomenon and its great promise to be used in studies of a wide variety of emerging 2D materials.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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