Even-denominator fractional quantum Hall (FQH) states, such as 5/2 and 7/2, have been well known in a two-dimensional electron gas (2DEG) for decades and are still investigated as candidates of non-Abelian statistics. In this paper, we present the observation of a 3/2 FQH plateau in a single-layer 2DEG with lateral confinement at a bulk filling factor of 5/3. The 3/2 FQH plateau is quantized at (h/e^2 )/(3/2) within 0.02%, and can survive up to 300 mK. This even-denominator FQH plateau may imply intriguing edge structure and excitation in FQH system with lateral confinement. The observations in this work demonstrate that understanding the effect of the lateral confinement on the many-body system is critical in the pursuit of important theoretical proposals involving edge physics, such as the demonstration of non-Abelian statistics and the realization of braiding for fault-tolerant quantum computation.
Recently, a zero Hall conductance plateau with random domains is experimentally observed in quantum anomalous Hall (QAH) effect. We study the effects of random domains on the zero Hall plateau in QAH insulators. We find the structure inversion symmetry determines the scaling property of the zero Hall plateau transition in the QAH systems. In the presence of structure inversion symmetry, the zero Hall plateau state shows a quantum-Hall-type critical point, originating from the two decoupled subsystems with opposite Chern numbers. However, the absence of structure inversion symmetry leads to mix…
We demonstrate experimentally that the transitions between adjacent integer quantum Hall (QH) states are equivalent to a QH-to-insulator transition occurring in the top Landau level, in the presence of an inert background of the other completely filled Landau levels, each contributing a single unit of quantum conductance, $e^{2}/h$, to the total Hall conductance of the system.
The quantum Hall effect (QHE) is a topologically protected phenomenon which has been observed in various systems. In experiments, the size of Hall bar device to realize the QHE is generally much larger than the phase coherence length, in which the quantum coherence of electrons is destroyed. Here, we theoretically study the influence of dephasing effect on the quantized Hall (QH) plateaus. We find that the QH plateau disappears in perfectly quantum coherent systems if the coupling between leads and central region is imperfect. The Hall resistance is very large and strongly oscillates instead o…
We calculate numerically the localization length critical index within the Chalker-Coddington (CC) model for plateau-plateau transitions in the quantum Hall effect. Lyapunov exponents have been calculated with relative errors on the order $10^{-3}$. Such high precision was obtained by considering the distribution of Lyapunov exponents for large ensembles of relatively short chains and calculating the ensemble average values. We analyze thoroughly finite size effects and find the localization length critical index $ν= 2.517\pm 0.018$.
We report quantum Hall experiments on the plateau-insulator transition in a low mobility In_{.53} Ga_{.47} As/InP heterostructure. The data for the longitudinal resistance ρ_{xx} follow an exponential law and we extract a critical exponent κ= .55 \pm .05 which is slightly different from the established value κ= .42 \pm .04 for the plateau transitions. Upon correction for inhomogeneity effects, which cause the critical conductance σ_{xx}^* to depend marginally on temperature, our data indicate that the plateau-plateau and plateau- insulator transitions are in the same universality class.
In this paper I revise arguments in favour of the PSL(2$|$2) Wess-Zumino-Novikov-Witten (WZNW) model as a theory of the plateau transition in Integer Quantum Hall effect. I show that all available numerical data (including the correlation length exponent $ν$) are consistent with the predictions of such WZNW model with the level $k=8$.
We study the plateaux of the integer quantum Hall resistance in a bilayer electron system in tilted magnetic fields. In a narrow range of tilt angles and at certain magnetic fields, the plateau level deviates appreciably from the quantized value with no dissipative transport emerging. A qualitative account of the effect is given in terms of decoupling of the edge states corresponding to different electron layers/Landau levels.
We extensively study the localization and the quantum Hall effect in the Hofstadter butterfly, which emerges in a two-dimensional electron system with a weak two-dimensional periodic potential. We numerically calculate the Hall conductivity and the localization length for finite systems with the disorder in general magnetic fields, and estimate the energies of the extended levels in an infinite system. We obtain the Hall plateau diagram on the whole region of the Hofstadter butterfly, and propose a theory for the evolution of the plateau structure with increasing disorder. There we show that a…
We investigate the AC electric field induced quantum anomalous Hall effect in honeycomb lattices and derive the full phase diagram for arbitrary field amplitude and phase polarization. We show how to induce anti-chiral edge modes as well as topological phases characterized by a Chern number larger than $1$ by means of suitable drivings. In particular, we find that the Chern number develops plateaus as a function of the frequency, providing an time-dependent analogue to the ones in the quantum Hall effect.
We analyze the conductance fluctuations observed in the quantum Hall regime for a bulk two-dimensional electron system in a Corbino geometry. We find that characteristics like the power spectral density and the temperature dependence agree well with simple expectations for universal conductance fluctuations in metals, while the observed amplitude is reduced. In addition, the dephasing length $L_Φ\propto T^{-1/2}$, which governs the temperature dependence of the fluctuations, is surprisingly different from the scaling length $L_{sc}\propto T^{-1}$ governing the width of the quantum Hall plateau…
Using different experimental techniques we examine the dynamical scaling of the quantum Hall plateau transition in a frequency range f = 0.1-55 GHz. We present a scheme that allows for a simultaneous scaling analysis of these experiments and all other data in literature. We observe a universal scaling function with an exponent kappa = 0.5 +/- 0.1, yielding a dynamical exponent z = 0.9 +/- 0.2.
We study numerically conductance fluctuations near the integer quantum Hall effect plateau transition. The system is presumed to be in a mesoscopic regime, with phase coherence length comparable to the system size. We focus on a two-terminal conductance G for square samples, considering both periodic and open boundary conditions transverse to the current. At the plateau transition, G is broadly distributed, with a distribution function close to uniform on the interval between zero and one in units of e^2/h. Our results are consistent with a recent experiment by Cobden and Kogan on a mesoscopic…
The quantum Hall plateau transition was studied at temperatures down to 1 mK in a random alloy disordered high mobility two-dimensional electron gas. A perfect power-law scaling with κ=0.42 was observed from 1.2K down to 12mK. This perfect scaling terminates sharply at a saturation temperature of T_s~10mK. The saturation is identified as a finite-size effect when the quantum phase coherence length (L_ϕ ~ T^{-p/2}) reaches the sample size (W) of millimeter scale. From a size dependent study, T_s \propto W^{-1} was observed and p=2 was obtained. The exponent of the localization length, determine…
We obtain a ``mean field'' scaling flow of the longitudinal and the Hall conductivities in the fractional quantum Hall regime. Using the composite fermion picture and assuming that the composite fermions follow the Khmelnitskii-Pruisken scaling flow for the integer quantum Hall effect, the unstable fixed points which govern the transitions between different fractional quantum Hall states are identified. Distributions of the critical longitudinal and Hall conductivities at the unstable fixed points are obtained and implications of the results for the experiments on mesoscopic quantum Hall syste…
The temperature dependence of the magneto-conductivity in graphene shows that the widths of the longitudinal conductivity peaks, for the N=1 Landau level of electrons and holes, display a power-law behavior following $Δν\propto T^κ$ with a scaling exponent $κ= 0.37\pm0.05$. Similarly the maximum derivative of the quantum Hall plateau transitions $(dσ_{xy}/dν)^{max}$ scales as $T^{-κ}$ with a scaling exponent $κ= 0.41\pm0.04$ for both the first and second electron and hole Landau level. These results confirm the universality of a critical scaling exponent. In the zeroth Landau level, however, t…
We discuss the charge distributions across the bulk of a two-dimensional electron gas system which is on an integer or fractional quantum Hall plateau. Our analysis is based on a relation, derived from the long wavelength limit of the bulk density-density response function, between the induced charge and leading derivatives of a slowly varying Hall potential. We use the Wiener-Hopf method to solve the coupled response and Poisson equations. Unlike the integer case, treated in previous work, the induced charge in the fractional case can alternate in sign.
Clean topological insulators exposed to a magnetic field develop Landau levels accompanied by a nonzero Hall conductivity for the infinite slab geometry. In this work we consider the case of disordered topological insulator nanowires and find, in contrast, that a zero Hall plateau emerges within a broad energy window close to the Dirac point. We numerically calculate the conductance and its distribution for a statistical ensemble of disordered nanowires, and use the conductance fluctuations to study the dependence of the insulating phase on system parameters, such as the nanowire length, disor…
We measure the Hall conductivity of a two-dimensional electron gas formed at a GaAs/AlGaAs heterojunction in the terahertz regime close to the cyclotron resonance frequency by employing a highly sensitive Faraday rotation method coupled with electrical gating of the sample to change the electron density. We observe clear plateau-and step-like features in the Faraday rotation angle vs. electron density and magnetic field (Landau-level filling factor), which are the high frequency manifestation of quantum Hall plateaus - a signature of topologically protected edge states. The results are compare…
Comment on ``Scaling in Plateau-Plateau Transition: A Direct Connection of Quantum Hall Systems with Anderson Localization Model'' [Wanli Li et al., Phys.Rev.Lett. 102, 216801 (2009)]
It is shown how the electromagnetic response of the 2DEG under Quantumm Hall Effect regime, chracterized by the Chern-Simons topological action, transforms the sample impurities and defects in charge reservoirs that stabilize the the Hall conductivity plateaus. The results, determine the basic dynamical origin of the singular properties of localization under the occurrence of the QHE obtained in the pioneering works of Laughlin and of Joynt and Prange, by means of a gauge invariance argument and a purely electronic analysis, respectively. The common picture of electrons moving the equipotentia…
The spectrum and the eigenstates of a finite 2D tight-binding electronic system, with Dirichlet boundary conditions, in magnetic field and external linear potential are studied. The eigenstates show an equipotential character and may cross the plaquette in the direction perpendicular to the electric field. When leads are added to the plaquette, the channels carrying the current may be shortcut by equipotentials, resulting in additional plateaus situated inbetween the usual IQHE plateaus. This idea is confirmed by a numerical calculation within the four-terminal Landauer-Büttiker approach.
An unusually wide plateau in the quantized Hall resistance has been revealed for a MQW heterostructure of wide p-GeSi / Ge / p-GeSi quantum wells with the Fermi energy comparable to the well bottom bending amplitude. This plateau exists in one of two metastable states of the sample, for which a symmetric quasi-double-quantum-well system is formed inside the Ge layer, and corresponds to the filling factor nu = 1 for each of two sublayers in the Ge layer. The plateau exists not only within a magnetic field range related to the quantum-Hall liquid, but extends beyond it into a so-called quantized…
We report a simple route to generate magnetotransport data that results in fractional quantum Hall plateaus in the conductance. Ingredients to the generating model are conducting tiles with integer quantum Hall effect and metallic linkers, further Kirchhoff rules. When connecting few identical tiles in a mosaic, fractional steps occur in the conductance values. Richer spectra representing several fractions occur when the tiles are parametrically varied. Parts of the simulation data are supported with purposefully designed graphene mosaics in high magnetic fields. The findings emphasize that th…
We study a delocalization transition for non-interacting quasiparticles moving in two dimensions, which belongs to a new symmetry class. This symmetry class can be realised in a dirty, gapless superconductor in which time reversal symmetry for orbital motion is broken, but spin rotation symmetry is intact. We find a direct transition between two insulating phases with quantized Hall conductances of zero and two for the conserved quasiparticles. The energy of quasiparticles acts as a relevant, symmetry-breaking field at the critical point, which splits the direct transition into two conventiona…
Mesoscopic fluctuations of two-port conductance and four-port resistance between Hall plateaus are studied within a realistic model for a two-dimensional electron gas in a perpendicular magnetic field and a smooth disordered potential. The two-port conductance distribution $P(g)$ is concave between $g=0$ and $g=1$ and is nearly flat between $g=0.2$ and $g=0.8$. These characteristics are consistent with recent observations. The distribution is found to be sharply peaked near the end-points $g=0$ and $g=1$. The distribution functions for the three independent resistances in a four-port Hall bar …
I review some aspects of an alternative model of the quantum Hall effect, which is not based on the presence of disorder potentials. Instead, a quantization of the electronic drift current in the presence of crossed electric and magnetic fields is employed to construct a non-linear transport theory. Another important ingredient of the alternative theory is the coupling of the two-dimensional electron gas to the leads and the applied voltages. By working in a picture, where the external voltages fix the chemical potential in the 2D subsystem, the experimentally observed linear relation between …
We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k top-gate on the epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic layer deposition process. At low temperatures, the devices demonstrate a strong field effect by the top gate with an on/off ratio of ~7 and an electron mobility up to ~3250 cm^2/Vs. After the observation of the half-integer quantum Hall ef…
We study the emergent role of many-body effects on a two dimensional electron gas (2DEG) within the Thomas-Fermi-Poisson approximation, including both the exchange and correlation interactions in the presence of a strong perpendicular magnetic field. It is shown that, the indirect interactions widen the odd-integer incompressible strips spatially, whereas the even-integer filling factors almost remain unaffected.
We report distinctive magnetotransport properties of a graphene p-n-p junction prepared by controlled diffusion of metallic contacts. In most cases, materials deposited on a graphene surface introduce substantial carrier scattering, which greatly reduces the high mobility of intrinsic graphene. However, we show that an oxide layer only weakly perturbs the carrier transport, which enables fabrication of a high-quality graphene p-n-p junction through a one-step and resist-free method. The measured conductance-gate voltage $(G-V_G)$ curves can be well described by a metal contact model, which con…
We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid critical exponent. By reversing the direction of the magnetic field we find that the averaged Hall resistance remains quantized at the plate…
The conductance of a two-dimensional electron gas at the transition from one quantum Hall plateau to the next has sample-specific fluctuations as a function of magnetic field and Fermi energy. Here we identify a universal feature of these mesoscopic fluctuations in a Corbino geometry: The amplitude of the magnetoconductance oscillations has an e^2/h resonance in the transition region, signaling a change in the topological quantum number of the insulating bulk. This resonance provides a signed scaling variable for the critical exponent of the phase transition (distinct from existing positive de…
Under periodic boundary condition in the transverse direction, we calculate the averaged zero-temperature two-terminal conductance ($<G>$) and its statistical fluctuations ($<(\dg)^{2n}>$ for $n\le 4$) at the critical point of integer quantum Hall plateau transitions. We find {\it universal} values for $<G>=(0.58\pm0.03){e^2\over h}$, and $<(\dg)^{2n}>=({e^2\over h})^{2n}A_{2n}$, where $A_{2,4,6,8}=0.081\pm0.005$; $0.013\pm0.003$; $0.0026\pm0.005$; and $(8\pm2)\times10^{-4}$ respectively. We also determine the leading finite size scaling corrections to these observables. Comparisons with exper…
The influence of dephasing on the quantum spin Hall effect (QSHE) is studied. In the absence of dephasing, the longitudinal resistance in a QSHE system exhibits the quantum plateaus. We find that these quantum plateaus are robust against the normal dephasing but fragile with the spin dephasing. Thus, these quantum plateaus only survive in mesoscopic samples. Moreover, the longitudinal resistance increases linearly with the sample length but is insensitive to the sample width. These characters are in excellent agreement with the recent experimental results [science {\bf 318}, 766 (2007)]. In ad…
We have revealed from a numerical study that the Hall plateaus are retained in the optical Hall conductivity $σ_{xy}(ω)$ in the ac ($\sim$ THz) regime in both of the ordinary two-dimensional electron gas and graphene in the quantum Hall regime, although the plateau height in ac deviates from integer multiples of $e^2/h$. The effect remains unexpectedly robust against a significant strength of disorder, which we attribute to an effect of localization. We predict the ac Hall plateaus are observable through the Faraday rotation with the rotation angle characterized by the fine-structure constant …
Half-quantized Hall Plateaus in the Confined Geometry of Graphene
Aalto University（阿尔托大学）；Weizmann Institute of Science（魏茨曼科学研究所）；Laboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité（巴黎高等师范学院物理实验室，ENS，巴黎文理研究大学，法国国家科学研究中心，索邦大学，巴黎西岱大学）；National Institute for Materials Science（国立材料研究所）
We numerically study the quantum Hall effect (QHE) in bilayer graphene based on tight-binding model in the presence of disorder. Two distinct QHE regimes are identified in the full energy band separated by a critical region with non-quantized Hall Effect. The Hall conductivity around the band center (Dirac point) shows an anomalous quantization proportional to the valley degeneracy, but the $ν=0$ plateau is markedly absent, which is in agreement with experimental observation. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of extended levels toward the band…
We summarize the screening theory of the integer quantized Hall effect (IQHE) and emphasize its two key mechanisms: first, the existence, in certain magnetic field intervals, of incompressible strips, with integer values of the local filling factor and quantized values of longitudinal and Hall resistivity, and second, the confinement of an imposed dissipative current to these strips, leading to the quantization of the global resistances. We demonstrate that, without any localization assumption, this theory explains the enormous experimental reproducibility of the quantized resistance values, a…
High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity $ρ_{xx}$ near the critical filling factor $ν_{c}$ ~ 0.5 follows the universal scaling law $ρ_{xx}(ν, T) \propto exp[-Δν/(T/T_{0})^κ]$, where $Δν=ν-ν_{c}$. The critical exponent $κ$ equals $0.56 \pm 0.02$, which indicates that the plateau-insul…
We present new results of the ``0.7'' 2(e^2)/h structure or quasi plateau in some of the most strongly confined point contacts so far reported. This strong confinement is obtained by a combination of shallow etching and metal gate deposition on modulation doped GaAs/GaAlAs heterostructures. The resulting subband separations are up to 20 meV, and as a consequence the quantized conductance can be followed at temperatures up to 30 K, an order of magnitude higher than in conventional split gate devices. We observe pronounced quasi plateaus at several of the lowest conductance steps all the way fro…
Topological magnetoelectric effect in a three-dimensional topological insulator is a novel phenomenon, where an electric field induces a magnetic field in the same direction, with a universal coefficient of proportionality quantized in units of $e^2/2h$. Here we propose that the topological magnetoelectric effect can be realized in the zero-plateau quantum anomalous Hall state of magnetic topological insulators or ferromagnet-topological insulator heterostructure. The finite-size effect is also studied numerically, where the magnetoelectric coefficient is shown to converge to a quantized value…
The localization behavior of noninteracting two-dimensional electrons in a random potential and strong magnetic field is of fundamental interest for the physics of the quantum Hall effect. In order to understand the emergence of power-law delocalization near the discrete extended-state energies $E_n = \hbar ω_c (n+{1/2})$, we study a generalization of the disorder-averaged Liouvillian framework for the lowest Landau level to $N$ flavors of electron densities (N=1 for the physical case). We find analytically the large-N limit and 1/N corrections for all disorder strengths: at $N = \infty$ this …
Low-energy magnon bands in a two-dimensional spin ice model become integer quantum magnon Hall bands. By calculating the localization length and the two-terminal conductance of magnon transport, we show that the magnon bands with disorders undergo a quantum phase transition from an integer quantum magnon Hall regime to a conventional magnon localized regime. Finite size scaling analysis as well as a critical conductance distribution shows that the quantum critical point belongs to the same universality class as that in the quantum Hall transition. We characterize thermal magnon Hall conductivi…
Recent quantum Hall experiments conducted on disordered graphene pn junction provide evidence that the junction resistance could be described by a simple Ohmic sum of the n and p mediums' resistances. However in the ballistic limit, theory predicts the existence of chirality-dependent quantum Hall plateaus in a pn junction. We show that two distinctively separate processes are required for this ballistic-Ohmic plateau transition, namely (i) hole/electron Landau states equilibration and (ii) valley iso-spin dilution of the incident Landau edge state. These conclusions are obtained by a simple s…
We report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic field, the Hall resistance moves from the plateau at Landau filling factor ν=6 directly to the plateau at ν=4, skipping the plateau at ν=5. However, when the filling factor approaches ν=5, the Hall resistance sharply "dives" to the value 1/5(h/e^2) characteristic of the ν=5 plateau, and then returns to 1/4(h/e^2). This is interpreted as a manifestation of the oscillating exchange enhancement of the valley splitting wh…
A mapping is developed between the quantum Hall plateau transition and two-dimensional self-interacting lattice polymers. This mapping is exact in the classical percolation limit of the plateau transition, and diffusive behavior at the critical energy is shown to be related to the critical exponents of a class of chiral polymers at the $θ$-point. The exact critical exponents of the chiral polymer model on the honeycomb lattice are found, verifying that this model is in the same universality class as a previously solved model of polymers on the Manhattan lattice. The mapping is obtained by aver…
We theoretically study the quantum Hall effect (QHE) in graphene with an ac electric field. Based on the tight-binding model, the structure of the half-integer Hall plateaus at $σ_{xy} = \pm(n + 1/2)4e^2/h$ ($n$ is an integer) gets qualitatively changed with the addition of new integer Hall plateaus at $σ_{xy} = \pm n(4e^2/h)$ starting from the edges of the band center regime towards the band center with an increasing ac field. Beyond a critical field strength, a Hall plateau with $σ_{xy} = 0$ can be realized at the band center, hence restoring fully a conventional integer QHE with particle-ho…
We study the critical properties of the quantum anomalous Hall (QAH) plateau transition in magnetic topological insulators. We introduce a microscopic model for the plateau transition in QAH effect at the coercive field and then map it to the network model of quantum percolation in the integer quantum Hall effect plateau transition. Generally, an intermediate plateau with zero Hall conductance could occur at the coercive field. $σ_{xx}$ would have double peaks at the coercivity while $ρ_{xx}$ only has single peak. Remarkably, this theoretical prediction is already borne out in experiment. Univ…
The longitudinal resistances of a six-terminal graphene p-n junction under a perpendicular magnetic field are investigated. Because of the chirality of the Hall edge states, the longitudinal resistances on top and bottom edges of the graphene ribbon are not equal. In the presence of suitable disorder, the top-edge and bottom-edge resistances well show the plateau structures in the both unipolar and bipolar regimes and the plateau values are determined by the Landau filling factors only. These plateau structures are in excellent agreement with the recent experiment. For the unipolar junction, t…
The quantum Hall effect is one of the most important developments in condensed matter physics of the 20th century. The standard explanations of the famous integer quantized Hall plateaus in the transverse resistivity are qualitative, and involve assumptions about disorder, localized states, extended states, edge states, Fermi levels pinned by Landau levels, etc. These standard narratives give plausible reasons for the existence of the plateaus, but provide little in the way of even a qualitative understanding of the shape and width of the Hall plateaus, much less a first principles calculation…
Quantum anomalous Hall (QAH) effect in magnetic topological insulators is driven by the combination of spontaneous magnetic moments and spin-orbit coupling. Its recent experimental discovery raises the question if higher plateaus can also be realized. Here we present a general theory for QAH effect with higher Chern numbers, and show by first-principles calculations that thin film magnetic topological insulator of Cr-doped Bi$_2$(Se,Te)$_3$ is a candidate for the C=2 QAH insulator. Remarkably, whereas higher magnetic field leads to lower Hall conductance plateaus in the integer quantum Hall ef…
We have realized an integer quantum Hall system with superconducting contacts by connecting graphene to niobium electrodes. Below their upper critical field of 4 tesla, an integer quantum Hall effect coexists with superconductivity in the leads, but with a plateau conductance that is larger than in the normal state. We ascribe this enhanced quantum Hall plateau conductance to Andreev processes at the graphene-superconductor interface leading to the formation of so-called Andreev edge-states. The enhancement depends strongly on the filling-factor, and is less pronounced on the first plateau, du…
Quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) is a novel transport phenomenon in which the Hall resistance reaches the quantum plateau in the absence of external magnetic field. Recently, this exotic effect has been discovered experimentally in an ultrathin film of the Bi2Te3 family TI with spontaneous ferromagnetic (FM) order. An important question concerning the QAH state is whether it is simply a zero-magnetic-field version of the quantum Hall (QH) effect, or if there is new physics beyond the conventional paradigm. Here we report experimental investigations on …
We have considered the response at two energies corresponding to two plateaus in the quantum Hall effect. Since the thermoelectric power involves the derivative of conductivity with respect to energy, we introduce the concept of a line width and hence an activation energy. We then use the Hall conductivity to define the thermoelectric power at the centre of two plateaus, which is found to vary monotonically as T^2 at low temperatures with fixed magnetic field. At elivated temperatures, the thermoelectric power varies as T(exp-Δ/k_BT).
Dynamical Hall conductivity σ_H(ω) of a 2D electron gas with impurities in the perpendicular magnetic field is analyzed. Plateau-like behavior at low frequencies as well as at high frequencies provided the complete filling of Landau levels is predicted. The broadening of a Landau level separates two frequency regions with different behaviour. Imaginary part of dynamical Hall conductivity reveals oscillations in the localized states region. Comparison with the experiment is carried out.
The $ν= 2/3$ fractional quantum Hall state is the hole-conjugate state to the primary Laughlin $ν= 1/3$ state. We investigate transmission of edge states through quantum point contacts fabricated on a GaAs/AlGaAs heterostructure designed to have a sharp confining potential. When a small but finite bias is applied, we observe an intermediate conductance plateau with $G = 0.5 \frac{e^2}{h}$. This plateau is observed in multiple QPCs, and persists over a significant range of magnetic field, gate voltage, and source-drain bias, making it a robust feature. Using a simple model which considers scatt…
