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arXiv 1701.04832cond-mat.mtrl-sciphysics.chem-ph
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固体基态和能带结构的高斯耦合集团理论

Gaussian-based coupled-cluster theory for the ground state and band structure of solids

James McClain, Qiming Sun, Garnet Kin-Lic Chan, Timothy C. Berkelbach

摘要:

我们给出了三维固体的基于高斯的基态和激发态运动方程的耦合团簇理论的单激发和双激发结果。我们专注于金刚石和硅,这是典型的共价半导体。除了基态性质(晶格常数,体积模量和内聚能),我们计算准粒子的能带结构和带隙。我们使用范数守恒赝势和极化双和三重zeta基组对布里渊区进行了多达64个k点的采样,导致了在2,176个轨道中具有多达256个电子的正则耦合簇计算。

英文摘要:

We present the results of Gaussian-based ground-state and excited-state equation-of-motion coupled-cluster theory with single and double excitations for three-dimensional solids. We focus on diamond and silicon, which are paradigmatic covalent semiconductors. In addition to ground-state properties (the lattice constant, bulk modulus, and cohesive energy), we compute the quasiparticle band structure and band gap. We sample the Brillouin zone with up to 64 k-points using norm-conserving pseudopotentials and polarized double- and triple-zeta basis sets, leading to canonical coupled-cluster calculations with as many as 256 electrons in 2,176 orbitals.

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