体相ZrTe5中Lifshitz跃迁介导的电子输运异常
Lifshitz transition mediated electronic transport anomaly in bulk ZrTe5
摘要：
五碲化锆ZrTe $_5$是一种非常有吸引力的拓扑材料平台，在其高度各向异性的三维狄拉克带中含有奇异的手征费米子，在下一代信息技术的发展中具有巨大的潜力。然而，其异常电阻率峰值背后的起源几十年来一直在争论。在这里，我们提供的运输证据证实的异常是一个直接的表现，在狄拉克带的Lifshitz过渡的载流子迁移率超过3 $\times$ 10 $^5$厘米$^2$ V $^{-1}$ s $^{-1}$。我们表明，Lifshitz转变是容易控制的载流子掺杂，这设置异常峰温度$T_p$的装置。发现$T_p$的尺度近似为$n_H^{0.27}$，其中霍尔载流子浓度$n_H$与线性色散狄拉克带中的费米能级$ε_F$ $\propto$ $n_H^{1/3}$相关。这种关系表明，$T_p$单调增加与$ε_F$，这作为一个有效的旋钮微调输运性质的五碲基狄拉克半金属。
英文摘要：
Zirconium pentatelluride ZrTe$_5$, a fascinating topological material platform, hosts exotic chiral fermions in its highly anisotropic three-dimensional Dirac band and holds great promise advancing the next-generation information technology. However, the origin underlying its anomalous resistivity peak has been under debate for decades. Here we provide transport evidence substantiating the anomaly to be a direct manifestation of a Lifshitz transition in the Dirac band with an ultrahigh carrier mobility exceeding 3$\times$10$^5$ cm$^2$ V$^{-1}$ s$^{-1}$. We demonstrate that the Lifshitz transition is readily controllable by means of carrier doping, which sets the anomaly peak temperature $T_p$. $T_p$ is found to scale approximately as $n_H^{0.27}$, where the Hall carrier concentration $n_H$ is linked with the Fermi level by $ε_F$ $\propto$ $n_H^{1/3}$ in a linearly dispersed Dirac band. This relation indicates $T_p$ monotonically increases with $ε_F$, which serves as an effective knob for fine tuning transport properties in pentatelluride-based Dirac semimetals.
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