单硫族光致伸缩二维材料
Photostrictive two-dimensional materials in the monochalcogenide family
摘要：
光致伸缩的预测SnS和SnSe单层，二维铁电体与矩形晶胞（晶格矢量$\mathbf{a}_1$大于$\mathbf{a}_2$）和平行于$\mathbf{a}_1$的固有偶极矩。发现这些二维材料中的光致伸缩是由光激发电子态中的屏蔽电极化的强度（即，逆压电效应），其导致$a_1$的压缩和相对较小的$a_2$的增加，从而减小了晶胞面积。这里记录的结构变化比在BiFeO $_3$中观察到的大10倍，使得单硫属化物单层成为这种效应的最终平台。这种结构的修改应该是可观察到的实验可行的密度的光致载流子的样品已经生长，具有潜在的有用性，光诱导，远程机械光电应用。
英文摘要：
Photostriction is predicted for SnS and SnSe monolayers, two-dimensional ferroelectrics with rectangular unit cells (the lattice vector $\mathbf{a}_1$ is larger than $\mathbf{a}_2$) and an intrinsic dipole moment parallel to $\mathbf{a}_1$. Photostriction in these two-dimensional materials is found to be induced by a screened electric polarization in the photoexcited electronic state (i.e., a converse piezoelectric effect) that leads to a compression of $a_1$ and a comparatively smaller increase of $a_2$ for a reduced unit cell area. The structural change documented here is ten times larger than that observed in BiFeO$_3$, making monochalcogenide monolayers an ultimate platform for this effect. This structural modification should be observable under experimentally feasible densities of photexcited carriers on samples that have been grown already, having a potential usefulness for light-induced, remote mechano-opto-electronic applications.
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