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arXiv 1701.00512cond-mat.mes-hallcond-mat.mtrl-sci
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Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2

Shuigang Xu, Junying Shen, Gen Long, Zefei Wu, Zhi-qiang Bao, Cheng-Cheng Liu, Xiao Xiao, Tianyi Han, Jiangxiazi Lin, Yingying Wu, Huanhuan Lu, Jianqiang Hou, L… 展开作者

Shuigang Xu, Junying Shen, Gen Long, Zefei Wu, Zhi-qiang Bao, Cheng-Cheng Liu, Xiao Xiao, Tianyi Han, Jiangxiazi Lin, Yingying Wu, Huanhuan Lu, Jianqiang Hou, Liheng An, Yuanwei Wang, Yuan Cai, K. M. Ho, Yuheng He, Rolf Lortz, Fan Zhang, Ning Wang

英文摘要:

We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level (LL) crossing effects at ultra-low coincident angles, revealing that the Zeeman energy is about three times as large as the cyclotron energy near the valence band top at Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe2, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe2 offers a unique platform with unusually heavy hole-carriers and a substantially enhanced g-factor for exploring strongly correlated phenomena.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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