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arXiv 1612.01239cond-mat.mtrl-sci
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埋地GaP/Si界面的亚皮秒声脉冲

Sub-picosecond acoustic pulses at buried GaP/Si interfaces

Kunie Ishioka, Avinash Rustagi, Andreas Beyer, Wolfgang Stolz, Kerstin Volz, Ulrich Hoefer, Hrvoje Petek, Christopher J. Stanton

摘要:

我们报道了在三维半导体晶体中传播的超短声脉冲的光产生和检测。生长在Si(001)上的晶格匹配的GaP层的光激发引起瞬态反射率的尖峰,这是由于在GaP/Si界面处产生的声脉冲和在GaP表面处检测到的声脉冲,反之亦然。反射率尖峰的极短宽度(0.5ps)将转化为3 nm或10个原子双层的空间范围,这与GaP/Si界面处的混合层的宽度相当。反射率信号也被修改的准周期布里渊振荡的GaP和Si所产生的声脉冲在晶体中的传播过程中。本研究结果表明,潜在的应用简单的光泵浦探测方案在埋入半导体界面质量的无损评价。

英文摘要:

We report on the optical generation and detection of ultrashort acoustic pulses that propagate in three-dimensional semiconductor crystals. Photoexcitaiton of lattice-matched GaP layers grown on Si(001) gives rise to a sharp spike in transient reflectivity due to the acoustic pulse generated at the GaP/Si interface and detected at the GaP surface and vice versa. The extremely short width of the reflectivity spike, 0.5 ps, would translate to a spatial extent of 3 nm or 10 atomic bilayers, which is comparable with the width of the intermixing layer at the GaP/Si interface. The reflectivity signals are also modified by quasi-periodic Brillouin oscillations of GaP and Si arising from the acoustic pulses during the propagation in the crystals. The present results demonstrate the potential application of the simple optical pump-probe scheme in the nondestructive evaluation of the buried semiconductor interface quality.

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