In disordered systems, the hopping conductivity regime is usually realized at low temperatures where spin-related phenomena differ strongly from the case of delocalized carriers. We develop the unified microscopic theory of current induced spin orientation, spin-galvanic and spin-Hall effects for the two-dimensional hopping regime. We show that the corresponding susceptibilities are proportional to each other and determined by the interplay between the drift and the diffusion spin currents. Estimations are made for realistic semiconductor heterostructures using the percolation theory. We show that the electrical spin polarization in the hopping regime increases exponentially with increase of the concentration of localization sites and may reach a few percents at the crossover from the hopping to the diffusion conductivity regime.
The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and driving force behind recent advances in van der Waals (vdW) heterostructures of two-dimensional materials. Here, we exploit a proximity-induced Rashba-Edelstein (REE) effect in vdW heterostructures of Weyl semimetal candidate MoTe2 and CVD graphene, where an unprecedented gate-controlled switching of spin-galvanic effect emerges due to an efficient spin-to-charge conversion at room temperature. The magnitude of the me…
An unusual photo-galvanic effect is predicted on the topological insulator surface when its semi-metallic electronic spectrum is modified by an adjacent ferromagnet. The effect is correlated with light absorption in a wide frequency range (from a few to hundreds of meV) and produces a pronounced response that is not only resonant to the photon energy but also tunable by an external electrical bias. The exceptionally strong peak photocurrent of the order of $μ$A/cm may be achieved at elevated temperatures with the illumination power of 1 W/cm$^2$ in the THz range on Bi$_2$Se$_3$. These advantag…
Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenom…
We study the spin-charge conversion mechanisms in a two-dimensional gas of electrons moving in a smooth disorder potential by accounting for both Rashba-type and Mott's skew scattering contributions. We find that quantum interference effects between spin-flip and skew scattering give rise to anisotropic spin precession scattering (ASP), a direct spin-charge conversion mechanism that was discovered in an earlier study of graphene decorated with adatoms [C. Huang \emph{et al.} Phys.~Rev.~B \textbf{94} 085414.~(2016)]. Our findings suggest that, together with other spin-charge conversion mechanis…
Using the Keldysh technique, we derive a set of quasiclassical equations for Bloch electrons in noncentrosymmetric crystals upon excitation with quasimonochromatic radiation in the presence of external electrical and magnetic fields. These equations are the analog to the semiconductor-Bloch-equations for the dynamics of electrons including the photogalvanic effect (PGE) in particular the shift mechanism. The shift PGE was recently identified as showing promise for the development of new photovoltaic materials. In addition, our theory may be useful to investigate the interplay between breaking …
By associating a spin-orbit interaction with a non-Abelian gauge potential, we theoretically present a spin polarization in a quite general form using an effective Yang-Mills field and a usual electromagnetic field. In this gauge invariant result, we focus on a purely electrically-induced spin contribution. We find that both the inverse spin galvanic effect and the spin Hall effect arise from the same origin, i.e., the SU(2)$\times$U(1) Hall effect. We also discover that a large effective magnetic field of the order of 1T is induced in the Rashba system.
The development of spintronics and spin-caloritronics devices need efficient generation, detection and manipulation of spin current. The thermal spin current from spin-Seebeck effect has been reported to be more energy efficient than the electrical spin injection methods. But, spin detection has been the one of the bottlenecks since metals with large spin-orbit coupling is an essential requirement. In this work, we report an efficient thermal generation and interfacial detection of spin current. We measured a spin-Seebeck effect in Ni80Fe20 (25 nm)/p-Si (50 nm) (polycrystalline) bilayers witho…
We develop an Effective Medium Theory to study the electrical transport properties of disordered graphene. The theory includes non-linear screening and exchange-correlation effects allowing us to consider experimentally relevant strengths of the Coulomb interaction. Assuming random Coulomb impurities, we calculate the electrical conductivity as a function of gate voltage describing quantitatively the full cross-over from the fluctuations dominated regime around the Dirac point to the large doping regime at high gate voltages. We find that the conductivity at the Dirac point is strongly affecte…
In materials lacking inversion symmetry, the spin-orbit coupling enables the direct connection between the electron's spin and its linear momentum, a phenomenon called inverse spin galvanic effect. In magnetic materials, this effect promotes current-driven torques that can be used to control the magnetization direction electrically. In this work, we investigate the current-driven inverse spin galvanic effect in a quantum well consisting in a magnetic material embedded between dissimilar insulators. Assuming the presence of Rashba spin-orbit coupling at the interfaces, we investigate the nature…
Resonant manipulation of carbon nanotube valley-spin qubits by an electric field is investigated theoretically. We develop a new analysis of electrically driven spin resonance exploiting fixed physical characteristics of the nanotube: a bend and inhomogeneous disorder. The spectrum is simulated for an electron valley-spin qubit coupled to a hole valley-spin qubit and an impurity electron spin, and features that coincide with a recent measurement are identified. We show that the same mechanism allows resonant control of the full four-dimensional spin-valley space.
We study a disordered superconducting nanowire, with broken time-reversal and spin-rotational symmetry, which can be driven into a topological phase with end Majorana bound states by an externally applied magnetic field. As a function of disorder strength, it is known that the Majorana nanowire has a delocalization quantum phase transition from a topologically nontrivial phase, which supports Majorana bound states, to a nontopological insulating phase without them. On both sides of the transition, the system is localized at zero energy albeit with very different topological properties. We expl…
We present a theoretical study of the spin dynamics of a single electron confined in a quantum dot. Spin dynamics is induced by the interplay of electrical driving and the presence of a spatially disordered magnetic field, the latter being transverse to a homogeneous magnetic field. We focus on the case of strong driving, i.e., when the oscillation amplitude $A$ of the electron's wave packet is comparable to the quantum dot length $L$. We show that electrically driven spin resonance can be induced in this system by subharmonic driving, i.e., if the excitation frequency is an integer fraction (…
The electrical potential on the surface of $\sim 300$ nm thick SiO$_2$ grown on single crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to $\sim 0.4 $V within regions of $1 μ$m. The potential fluctuations observed at the surface of these usual dielectric holders of graphene sheets should induce strong variations in the graphene charge densities and provide a simple explanation for some of the anomalous behaviors of the transport properties of graphene.
The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed for mono- and bilayer graphene samples. As a result the edge contributes strongly to the overall doping of the samples. Furthermore the edge disorder can be found as the main limiting source of the mobility for narrow samples.
Efficient detection of spin-charge conversion is crucial for advancing our understanding of emergent phenomena in spin-orbit-coupled nanostructures. Here, we provide proof of principle of an electrical detection scheme of spin-charge conversion that enables full disentanglement of competing spin-orbit coupling transport phenomena in diffusive lateral channels i.e. the inverse spin Hall effect (ISHE) and the spin galvanic effect (SGE). A suitable detection geometry in an applied oblique magnetic field is shown to provide direct access to spin-charge transport coefficients through a simple symme…
We review the random matrix theory describing elastic scattering through zero-dimensional ballistic cavities (having chaotic classical dynamics) and quasi-one dimensional disordered systems. In zero dimension, general symmetry considerations (flux conservation and time reversal symmetry) are only considered, while the combination law of scatterers put in series is taken into account in quasi-one dimension. Originally developed for calculating the distribution of the electrical conductance of mesoscopic systems, this theory naturally reveals the universal behaviors characterizing elastic scatte…
Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5x5 mm) industrial monolayer graphene film. Samples were irradiated by different doses of C${}^+$ ion beam up to $10^{15}$ cm${}^{-2}$. It was observed that at the utmost degree of disorder, the Raman spectra lines disappear which is accompanied by the exponential increase of resistance and change in the current-voltage characteristics.These effects are explained by suggestion that hig…
The spin relaxation time of localized charge carriers is few orders of magnitude larger than that of free electrons and holes. Therefore mutual conversion of spin polarization, charge current and spin current turns out to be underlined in the hopping conductivity regime. We reveal different regimes of the coupled spin and charge dynamics depending on the relation between spin relaxation time and the characteristic hopping time. We derive kinetic equations to describe electrical spin orientation, dc spin-Hall effect, and spin galvanic effect in the transverse magnetic field. The generalized mac…
We use microscopic linear response theory to derive a set of equations that provide a complete description of coupled spin and charge diffusive transport in a two-dimensional electron gas (2DEG) with the Rashba spin-orbit (SO) interaction. These equations capture a number of interrelated effects including spin accumulation and diffusion, Dyakonov-Perel spin relaxation, magnetoelectric, and spin-galvanic effects. They can be used under very general circumstances to model transport experiments in 2DEG systems that involve either electrical or optical spin injection. We comment on the relationshi…
In magnetically doped thin-film topological insulators, aligning the magnetic moments generates a quantum anomalous Hall phase supporting a single chiral edge state. We show that as the system de-magnetizes, disorder from randomly oriented magnetic moments can produce a `quantum anomalous parity Hall' phase with \emph{helical} edge modes protected by a unitary reflection symmetry. We further show that introducing superconductivity, combined with selective breaking of reflection symmetry by a gate, allows for creation and manipulation of Majorana zero modes via purely electrical means and at ze…
This is an overview of current-induced spin polarization in gyrotropic semiconductor nanostructures. Such a spin polarization as response to a charge current may be classified as the inverse of the spin-galvanic effect, and sometimes is called as magneto-electrical effect or Edelstein (Rashba-Edelstein) effect. Apart from reviewing the experimental status of affairs, we have provided a detailed theoretical description of both effects in terms of a phenomenological model of spin-dependent relaxation processes, and an alternative theoretical approach based on the quasi-classical Boltzmann equati…
We study experimentally the transport properties of "inverted" semiconductor HgTe-based quantum well, which is related to the two-dimensional topological insulator, in diffusive transport regime. We perform nonlocal electrical measurements in the absence of the magnetic field and observe large signal due to the edge states. It demonstrates, that the edge states can propagate over long distance 1 mm, and, therefore, there is no difference between local and non local electrical measurements in topological insulator. In the presence of the in-plane magnetic field we find strong decrease of the lo…
We numerically analyze the energy level statistics of the Anderson model with Gaussian site disorder and constant hopping. The model is realized on different two-dimensional lattices, namely, the honeycomb, the kagomé, the square, and the triangular lattice. By calculating the well-known statistical measures viz., nearest neighbor spacing distribution, number variance, the partition number and the dc electrical conductivity from Kubo-Greenwood formula, we show that there is clearly a delocalization to localization transition with increasing disorder. Though the statistics in different lattice …
The transport characteristics of a disordered MoS$_2$ nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS$_2$ nanoflake is exfoliated from a bulk MoS$_2$ crystal and the conductance $G$ and magnetoresistance are measured in a four-probe setup over a wide range of temperatures. At high temperatures, we observe that $\log_{10}G$ exhibits a $-T^{-1}$ temperature dependence and the transport in the nanoflake dominantly arises from thermal activation. At low temperatures, where the transport in the nanoflake dominantly takes place via varia…
In these lecture notes we study the disordered two-dimensional electron gas in the presence of Rashba spin-orbit coupling, by using the Keldysh non-equilibrium Green function technique. We describe the effects of the spin-orbit coupling in terms of a SU(2) gauge field and derive a generalized Boltzmann equation for the charge and spin distribution functions. We then apply the formalism to discuss the spin Hall and the inverse spin galvanic (Edelstein) effects. Successively we show how to include, within the generalized Boltzmann equation, the side jump, the skew scattering and the spin current…
We derive a formula for the quantum corrections to the electrical current for a metal out of equilibrium. In the limit of linear current-voltage characteristics our formula reproduces the well known Altshuler-Aronov correction to the conductivity of a disordered metal. The current formula is obtained by a direct diagrammatic approach, and is shown to agree with what is obtained within the Keldysh formulation of the non-linear sigma model. As an application we calculate the current of a mesoscopic wire. We find a current-voltage characteristics that scales with $eV/kT$, and calculate the differ…
We investigate the transport properties of narrow quantum wires realized in disordered two-dimensional electron gases in the presence of k-linear Rashba and Dresselhaus spin-orbit interaction (SOI), and an applied in-plane magnetic field. Building on previous work [Scheid, et al., PRL 101, 266401 (2008)], we find that in addition to the conductance, the universal conductance fluctuations also feature anisotropy with respect to the magnetic field direction. This anisotropy can be explained solely from the symmetries exhibited by the Hamiltonian as well as the relative strengths of the Rashba an…
We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature. Spin-sensitive electrical measurements unveil full spin-polarization reversal by an applied gate voltage. The observed gate-tunable charge-to-spin conversion is explained by the ideal work function mismatch between 2H-TaS2 and graphene, which allows strong interface-induced Bychkov-Rashba interaction with a spin-gap reaching 70 meV, while keeping the Dirac na…
The electron--electron scattering does not affect the electrical current in Galilean--invariant systems. We show that nevertheless electron--electron collisions may contribute to the electric resistivity of systems with parabolic spectrum provided that they have multiply connected Fermi surface and there is an additional mechanism of scattering. To this end, we calculate the resistivity of a two-dimensional electron gas with two filled transverse subbands in a presence of electron--electron and impurity scattering. Though the collisions between the electrons do not directly affect the current …
We report electrical transport measurements on individual disordered carbon nanotubes, grown catalytically in a nanoporous anodic aluminum oxide template. In both as-grown and annealed types of nanotubes, the low-field conductance shows as exp[-(T_{0}/T)^{1/2}] dependence on temperature T, suggesting that hopping conduction is the dominant transport mechanism, albeit with different disorder-related coefficients T_{0}. The field dependence of low-temperature conductance behaves an exp[-(xi_{0}/xi)^{1/2}] with high electric field xi at sufficiently low T. Finally, both annealed and unannealed na…
We present the electrical transport characteristics of a batch of nano-crystalline diamond films of varying nitrogen concentrations and explain the conduction mechanism by the disordered quasi-superlattice model applied to semiconductor heterostructures. Synthesized by the hot filament chemical vapour deposition technique, the degree of structural disorder in the films, confirmed from Raman spectroscopy, is found to be controllable, resulting in the transition of conduction mechanism from localized and activated to the metallic conduction regime. Hence through high field magneto-resistance mea…
We investigate the scattering and localization properties of edge and bulk states in a disordered two-dimensional topological insulator when they coexist at the same fermi energy. Due to edge-bulk backscattering (which is not prohibited \emph{a priori} by topology or symmetry), Anderson disorder makes the edge and bulk states localized indistinguishably. Two methods are proposed to effectively decouple them and to restore robust transport. The first kind of decouple is from long range disorder, since edge and bulk states are well separated in $k$ space. The second one is from an edge gating, o…
The temperature dependent resistance $R$($T$) of polycrystalline ferromagnetic CoFeB thin films of varying thickness are analyzed considering various electrical scattering processes. We observe a resistance minimum in $R$($T$) curves below $\simeq$ 29 K, which can be explained as an effect of intergranular Coulomb interaction in a granular system. The structural and Coulomb interaction related scattering processes contribute more as the film thickness decreases implying the role of disorder and granularity. Although the magnetic contribution to the resistance is the weakest compared to these t…
The effect of impurity and domain-wall scattering on the electrical conductivity of disordered mesoscopic magnetic thin films is studied by use of computer simulation. The results indicate a reduction of resistivity due to a domain wall, which is consistent with the explanation in terms of the dephasing caused by domain wall.
Graphene grown by chemical vapor deposition and supported on SiO2 and sapphire substrates was studied following controlled introduction of defects induced by 35 keV carbon ion irradiation. Changes in Raman spectra following fluences ranging from 10^12 cm^-2 to 10^15 cm^-2 indicate that the structure of graphene evolves from a highly ordered layer, to a patchwork of disordered domains, to an essentially amorphous film. These structural changes result in a dramatic decrease in the Hall mobility by orders of magnitude while, remarkably, the Hall concentration remains almost unchanged, suggesting …
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface states degrade the electrical properties of the starting material. In this paper we demonstrate a two-dimensional hole gas of high mobility ($5\times 10^{5}$ cm$^2$/Vs) in a very shallow strained germanium channel, which is located only 22 nm below the surface. This high mobility leads to mean free paths $\approx6 μm$, setting new benchmarks for holes in shal…
Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and causes a nonequilibrium spin accumulation observed near the sample boundary, the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric current, or the reverse process, in which an electrical current generates a nonequilibrium spin polarization, are all consequences of spin-orbit coupling. In order to observe a spin Hall effect a bias d…
The Landauer formula provides a general scattering formulation of electrical conduction. Despite its utility, it has been mainly applied to the linear-response regime, and a scattering theory of nonlinear response has yet to be fully developed. Here, we extend the Landauer formula to the nonlinear-response regime. We show that while the linear conductance is directly related to the transmission probability, the nonlinear conductance is given by its derivatives with respect to energy. This sensitivity to the energy derivatives is shown to produce unique nonlinear transport phenomena of mesoscop…
We develop a valley-dependent envelope function theory that can describe the effects of arbitrary configurations of interface steps and miscuts on the qubit relaxation time. For a given interface roughness, we show how our theory can be used to find the valley-dependent dipole matrix elements, the valley splitting, and the spin-valley coupling as a function of the electromagnetic fields in a Si/SiGe quantum dot spin qubit. We demonstrate that our theory can quantitatively reproduce and explain the result of experimental measurements for the spin relaxation time with only a minimal set of free …
The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of disordered F/N/F perpendicular spin valves as a function of the angle between magnetization vectors is shown to obey a simple universal law. The spin-current induced magnetization torque can be measured by the angular magnetoresistance of these spin valves. The results are generalized to arbitrary magnetoelectronic circuits.
Magnetism typically arises from the joint effect of Fermi statistics and repulsive Coulomb interactions, which favors ground states with non-zero electron spin. As a result, controlling spin magnetism with electric fields---a longstanding technological goal in spintronics and multiferroics---can be achieved only indirectly. Here, we experimentally demonstrate direct electric field control of magnetic states in an orbital Chern insulator, a magnetic system in which non-trivial band topology favors long range order of orbital angular momentum but the spins are thought to remain disordered. We us…
