Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have been studied in magnetic field parallel and tilted with respect to the sample normal. Effective electron-hole g-factor has been found by measurement of splitting of polarized magneto-PL lines. Lande factors of electrons have been calculated using the 14-band kp method and g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying tilted magnetic field.
Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells
研究了InP晶格匹配InGaAs/InAlAs量子阱的低温光致发光线宽与衬底（100）面小角度取向差的关系。量子阱生长在InP衬底上，取向偏离0、0.2、0.4和0.6度;发现0.4度一致地导致最窄峰，从15 nm量子阱发现的最佳光谱纯度为~4.25 meV。从15 nm量子阱的发射宽度被用来优化生长参数。然后生长出厚层的掺硅InGaAs，发现其在低温（77 K）下具有体积效应，电子迁移率高达μ~ 3.5 x 10^4 cm 2/Vs，电子浓度约为1 x 10^16。
Doubling the mobility of InAs/InGaAs selective area grown nanowires
纳米线和网络的选择性区域生长（SAG）有望成为基于III-V族半导体材料的可扩展电子，光子和量子器件的途径。然而，高迁移率SAG纳米线的潜力尚未完全实现，因为界面粗糙度、纳米线/衬底界面处的错配位错以及由于材料混合而导致的不均匀组成会散射所有电子。在这里，我们探讨SAG绝缘GaAs（001）衬底上的高度晶格失配的InAs纳米线，并解决这些关键的挑战。原子光滑的纳米线/衬底界面实现与使用原子氢（a-H）作为替代传统的热退火的原生氧化物去除。高晶格失配的问题通过在InAs传输通道和GaAs衬底之间引入In $_x$ Ga $_{1-x}$ As缓冲层来解决。在缓冲层和沟道中观察到的Ga-In材料混合通过仔细调节生长温度来抑制。进行扫描透射电子显微镜和X射线衍射分析以及低温传输测量，我们表明，优化的富In缓冲层促进高品质的InAs传输通道的场效应电子迁移率超过~10000 cm $^2$ V $^{-1}$ s $^{-1}$。这是两倍的非优化的样品和InAs选择性区域生长的纳米结构的最高报告。
Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots
Molecular beam epitaxy of wafer-scale O-band InAs/InGaAs quantum dots on GaAs for quantum photonics
Technical University of Munich（慕尼黑工业大学）；TUM School of Computation, Information and Technology, Technical University of Munich（慕尼黑工业大学计算、信息与技术学院）；Julius-Maximilians-Universität Würzburg（维尔茨堡大学）；Saqura Technologies GmbH（萨库拉技术有限公司）；Ruhr University Bochum（波鸿鲁尔大学）；Ludwig-Maximilians-University Munich（慕尼黑大学）；Technical University Berlin（柏林工业大学）；Karlsruhe Institute of Technology（卡尔斯鲁厄理工学院）
Electrically tunable orbital coupling and quantum light emission from O-band quantum dot molecules
Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich（慕尼黑工业大学沃尔特·施特克特研究所）；Munich Center for Quantum Science and Technology (MCQST)（慕尼黑量子科学与技术中心）；Center for Quantum Engineering (ZQE) and School of Computation, Information and Technology, Technical University of Munich（慕尼黑工业大学量子工程中心与计算、信息与技术学院）；Julius-Maximilians-Universität Würzburg, Physikalisches Institut, Lehrstuhl für Technische Physik（维尔茨堡大学物理系技术物理教席）；Walter Schottky Institute, Technical University of Munich（慕尼黑工业大学沃尔特·施特克特研究所）；Saqura Technologies GmbH（萨库拉技术有限公司）；Karlsruhe Institute of Technology, Institute of Photonics and Quantum Electronics IQST（卡尔斯鲁厄理工学院光子学与量子电子学研究所）
