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arXiv 1609.09217cond-mat.mes-hall
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Weyl半金属量子阱结构的电子性质

Electronic properties in a quantum well structure of Weyl semimetal

Wen-Long You, Xue-Feng Wang, Andrzej M. Oleś, Jiao-Jiao Zhou

摘要:

本文研究了三维外尔电子在一维矩形静电势作用下的束缚态和输运。具有有限横波矢量的受限态存在于高于半阱深或低于半势垒高度的能量处。矩形势对于垂直入射的电子是完全透明的,但对于其他情况则不然。隧穿透射系数对入射角敏感,当入射能量与受限光谱一致时,透射系数出现共振峰。此外,对于通过势垒(阱)的导(价)带中的电子,透射光谱具有宽度随入射角增加的间隙。有趣的是,当费米能与势能的顶部和底部能量对齐时,只有垂直于势能界面的电子束可以通过时,势能上的电子线性零温电导可以接近于零。所考虑的结构可以用来准直外尔电子束。

英文摘要:

We investigate the confined states and transport of three-dimensional Weyl electrons around a one-dimensional external rectangular electrostatic potential. Confined states with finite transverse wave vector exist at energies higher than the half well depth or lower than the half barrier height. The rectangular potential appears completely transparent to normal incident electrons but not otherwise. The tunneling transmission coefficient is sensitive to their incident angle and shows resonant peaks when their energy coincides with the confined spectra. In addition, for electrons in the conduction (valence) band through a potential barrier (well), the transmission spectrum has a gap of width increasing with the incident angle. Interestingly, the electron linear zero-temperature conductance over the potential can approach zero when the Fermi energy is aligned to the top and bottom energies of the potential, when only electron beams normal to the potential interfaces can pass through. The considered structure can be used to collimate Weyl electron beams.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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