All-optical switching by domain wall motion has been observed in Co/Pd superlattices. Heat accumulation is part of the switching process for our experimental conditions. Numerical calculations point to a connection between domain wall motion and in-plane heat diffusion.
Rare Transition Events in Nonequilibrium Systems with State-Dependent Noise: Application to Stochastic Current Switching in Semiconductor Superlattices
Domain-Growth Kinetics and Scaling Laws Governing Pulse-Driven Accumulative Polarization Switching in HZO
Bihar National College, Patna University(巴特纳大学比哈尔国立学院);Indian Institute of Technology Ropar(印度技术研究所罗帕尔分校);Indian Institute of Technology Mandi(印度技术研究所曼迪分校)
Interface magnetic coupling and magnetization dynamic of La$_{2/3}$Sr$_{1/3}$MnO$_3$ single layer and (La$_{2/3}$Sr$_{1/3}$MnO$_3$/SrRuO$_3$)$_n$ (n = 1, 5) superlattice on SrTiO$_3$(001) substrate
Domain-Wall-Mediated Ultralow-Barrier Sliding and Pinning in Ferroelectric Moiré Superlattices Revealed by Machine Learning
National Center for Nanoscience and Technology, Chinese Academy of Sciences(中国科学院国家纳米科学中心);School of Physical Sciences, University of Chinese Academy of Sciences(中国科学院大学物理科学学院);Songshan Lake Materials Laboratory(松山湖材料实验室)
Nanyang Technological University(南洋理工大学);Nanjing Tech University(南京工业大学);National Institute for Materials Science(国立材料研究所);CNRS(法国国家科学研究中心);Université Côte d’Azûr(蔚蓝海岸大学);Sorbonne Université(索邦大学);National University of Singapore(新加坡国立大学);Center for Quantum Technologies(量子技术中心);Quantum Science and Engineering Center (QSec)(量子科学与工程中心)
Femtosecond structural transformation of phase-change materials far from equilibrium monitored by coherent phonons
诸如准二元GeTe-Sb $_{2}$ Te $_{3}$合金的多组分硫属化物广泛地用于可擦除光盘形式的光学数据存储介质中。Ge $_{2}$ Sb $_{2}$ Te $_{5}$(GST)尤其已被证明是性能最好的材料之一,其可靠性允许超过10个$^{6}$写入-擦除循环。尽管有这些工业应用,GST中快速相变的基本动力学仍然存在争议,并且关于最终速度限制的积极辩论仍在继续。在这里,我们探索超快结构转变的光激发GST超晶格,其中GeTe和Sb $_{2}$ Te $_{3}$空间分离,使用相干声子谱与泵浦-泵浦-探测序列。通过分析不同时间区域的相干声子谱,在GST超晶格(而不是GST合金)中观察到激发时的复杂结构动力学,这可以描述为来自两种不同配位环境的Ge位的混合。我们的研究结果表明,GST超晶格的超快开关器件的可能适用性。