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arXiv 1607.08059cond-mat.mtrl-sci
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基于第一性原理计算的磷烯/BN结构中的能隙控制

Gap control in phosphorene/BN structures from first principles calculations

Lukas Eugen Marsoner Steinkasserer, Simon Suhr, Beate Paulus

摘要:

使用DFT以及$G_0W_0$计算,我们研究了静态和动态的磷烯带隙上的沉积和封装/在BN多层膜。我们演示了如何竞争的长距离和短距离的影响,导致磷烯的带隙增加在低P-BN层间间距,而带隙被发现下降到低于孤立磷烯在BN/P双层在中间距离约4埃。发现BN层的后续堆叠,即BN/BN/P和BN/BN/BN/P在DFT水平具有可忽略的影响,而在$G_0W_0$,与BN/P双层相比,增加的屏蔽降低了带隙。两个BN层之间的封装被发现增加磷烯带隙的值约为观察到的两倍时,从独立的磷烯BN/P。我们进一步研究使用的$\rm{GLLB-SC}$功能作为起点的$G_0W_0$计算显示它,在磷烯的情况下,产生的结果接近那些从$GW_0@\rm{PBE}$计算。

英文摘要:

Using both DFT as well as $G_0W_0$ calculations, we investigate static and dynamic effects on the phosphorene band gap upon deposition and encapsulation on/in BN multilayers. We demonstrate how competing long- and short-range effects cause the phosphorene band gap to increase at low P - BN interlayer spacings, while the band gap is found to drop below that of isolated phosphorene in the BN/P bilayer at intermediate distances around 4 Å. Subsequent stacking of BN layers, i.e. BN/BN/P and BN/BN/BN/P is found to have a negligible effect at the DFT level while at the $G_0W_0$ increased screening lowers the band gap as compared to the BN/P bilayer. Encapsulation between two BN layer is found to increase the phosphorene band gap by a value approximately twice that observed when going from freestanding phosphorene to BN/P. We further investigate the use of the $\rm{GLLB-SC}$ functional as a starting point for $G_0W_0$ calculations showing it to, in the case of phosphorene, yield results close to those obtained from $GW_0@\rm{PBE}$ calculations.

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