氧对超薄HfO $_2$基忆阻开关器件量子电导的调制
Oxygen modulated quantum conductance for ultra-thin HfO$_2$-based memristive switching devices
摘要：
忆阻开关器件是阻性随机存取存储器技术的候选器件，已被证明可以通过具有量化电导和随后的非整数电导（就电导量子$G_0$而言）的一系列状态来关闭。我们已经进行了计算的基础上的密度泛函理论模型的Pt-HfO $_2$ -Pt结构的开关过程，涉及一个或两个氧原子的运动。氧原子在导电氧空位细丝中的移动起到隧穿势垒的作用，并将细丝分割成弱耦合的量子阱。结果表明，当一个氧原子离开界面时，低偏压电导呈指数下降。我们的研究结果表明，高灵敏度的设备电导氧原子的位置。
英文摘要：
Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent non-integer conductance (in terms of conductance quantum $G_0$). We have performed calculations based on density functional theory to model the switching process for a Pt-HfO$_2$-Pt structure, involving the movement of one or two oxygen atoms. Oxygen atoms moving within a conductive oxygen vacancy filament act as tunneling barriers, and partition the filament into weakly coupled quantum wells. We show that the low-bias conductance decreases exponentially when one oxygen atom moves away from interface. Our results demonstrate the high sensitivity of the device conductance to the position of oxygen atoms.
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