arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 1606.04051cond-mat.mes-hall
收藏

用双光子显微术探测半导体中少数载流子动力学

Minority-carrier dynamics in semiconductors probed by two-photon microscopy

Benoit Gaury, Paul M. Haney

摘要:

双光子时间分辨光致发光最近已被应用于各种半导体器件,以确定载流子寿命和表面复合速度。到目前为止,理论建模活动主要限于该技术的常用单光子对应物。在这里,我们提供了一个3D扩散方程,描述在低注入制度的双光子显微镜的解析解。我们专注于一个系统与一个单一的掩埋界面增强复合,并分析如何运输,散装和表面重组影响光致发光衰减。我们发现,在短时间内,大量的测量主要由扩散和大量的重组在很长的时间。当光点距离探测界面小于扩散长度时,表面复合会改变体信号。此外,分辨率随着光斑尺寸的减小而增加,然而这使得信号对扩散更敏感。

英文摘要:

Two-photon time-resolved photoluminescence has been recently applied to various semiconductor devices to determine carrier lifetime and surface recombination velocities. So far the theoretical modeling activity has been mainly limited to the commonly used one-photon counterpart of the technique. Here we provide the analytical solution to a 3D diffusion equation that describes two-photon microscopy in the low-injection regime. We focus on a system with a single buried interface with enhanced recombination, and analyze how transport, bulk and surface recombinations influence photoluminescence decays. We find that bulk measurements are dominated by diffusion at short times and by bulk recombination at long times. Surface recombination modifies bulk signals when the optical spot is less than a diffusion length away from the probed interface. In addition, the resolution is increased as the spot size is reduced, which however makes the signal more sensitive to diffusion.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑