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arXiv 1605.03423cond-mat.softphysics.chem-ph
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流体等电点

Iso-electric point of fluid

Li Wan

摘要:

等电点(IEP)是PH,在该PH下,$ζ$电位被测量为零。IEP的发生被认为是由于在固液界面处的表面电荷密度(SCD)的中和。本文以水-二氧化硅体系为例,利用势阱模型研究了不同PC和pH下表面电荷密度的来源。结果表明,在$PH<8$的情况下,SCD主要来源于水分子的解离。当$PH>9$作用时,界面处俘获的体离子可以主导SCD.由于质量作用定律,水分子的解离在接近IEP的PH下被抑制,导致表面电荷密度为零。以这种方式,在IEP处获得零$ζ$电势。随着水中盐浓度的增加,$ζ$电位降低,表面电荷密度增加。

英文摘要:

Iso-electric point(IEP) is the PH, at which the $ζ$ potential is measured to be zero. The occurrence of IEP has been understood due to the neutralization of surface charge density (SCD) at the solid-liquid interface. In this work, we use the potential trap model to study the sources of the surface charge density at verious PC and PH, by taking the water-silica system as an example. It is revealed that in the case of $PH<8$, the SCD is mainly originated from the dissociation of water molecules. And the bulk ions trapped at the interface can dominate the SCD when $PH>9$. Due to the mass action law, the dissociation of water molecules is suppressed at the PH close to IEP, leading to a zero surface charge density. In this way, zero $ζ$ potential is obtained at the IEP. It has also been obtained that the increase of the salt concentration in the water can decrease the $ζ$ potential, but increase the surface charge density.

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