We report magnetic field dependent transport measurements on a single crystal of cubic YSb together with first principles calculations of its electronic structure. The transverse magnetoresistance does not saturate up to 9 T and attains a value of 75,000 % at 1.8 K. The Hall coefficient is electron-like at high temperature, changes sign to hole-like between 110 and 50 K, and again becomes electron-like below 50 K. First principles calculations show that YSb is a compensated semimetal with a qualitatively similar electronic structure to that of isostructural LaSb and LaBi, but with larger Fermi surface volume. The measured electron carrier density and Hall mobility calculated at 1.8 K, based on a single band approximation, are 6.5$\times10^{20}/$cm$^{3}$ and 6.2$\times10^{4}$cm$^{2}$/Vs, respectively. These values are comparable with those reported for LaBi and LaSb. Like LaBi and LaSb, YSb undergoes a magnetic field-induced metal-insulator-like transition below a characteristic temperature T$_{m}$, with resistivity saturation below 13 K. Thickness dependent electrical resistance measurements show a deviation of the resistance behavior from that expected for a normal metal; however, they do not unambiguously establish surface conduction as the mechanism for the resistivity plateau.
Angular magnetotransport measurements have been performed to tackle the origin of the magnetoresistance in the quasi-1D Hollandite Ba1.2Rh8O16. Three samples of different impurities amount were measured. We observe that the low temperature resistivity upturn is not due to a charge density wave transition, and a dominant role of impurities scattering for low temperature transport properties is instead demonstrated. The components of magnetoresistance were separated by using the Kohler plot and the angular dependency of the resistance under magnetic field. It shows the major contribution of an i…
Utilizing Corbino disc structures, we have examined the magnetic field response of resistivity for the surface states of SmB6 on different crystalline surfaces at low temperatures. Our results reveal a hysteretic behavior whose magnitude depends on the magnetic field sweep rate and temperature. Although this feature becomes smaller when the field sweep is slower, a complete elimination or saturation is not observed in our slowest sweep-rate measurements, which is much slower than a typical magnetotransport trace. These observations cannot be explained by quantum interference corrections such a…
We investigated the electrical and magnetic properties of low-energy hydrogen-implanted ZnO single crystals with hydrogen concentrations up to 3 at.% in the first 20 nm surface layer between 10 K and 300 K. All samples showed clear ferromagnetic hysteresis loops at 300 K with a saturation magnetization up to 4 emu/g. The measured anomalous Hall effect agrees with the hysteresis loops measured by superconducting quantum interferometer device magnetometry. All the H-treated ZnO crystals exhibited a negative magnetoresistance up to the room temperature. The relative magnitude of the anisotropic m…
Strong metamagnetic switching and anisotropic magnetotransport in the distorted kagome magnet Tb6Ti4Al43
Indian Institute of Technology Delhi（印度理工学院德里分校）；Max-Planck-Institute for Chemical Physics of Solids（马克斯·普朗克固体化学物理研究所）；Department of Physics, Institute for Materials Research, Tohoku University（东北大学物质材料研究学院物理学系）
Combination of different nontrivial topological states in a single material is capable of realizing multiple functionalities and exotic physics, but such materials are still very sparse. We report herein the results of magnetotransport measurements and ab initio calculations on single crystalline CaAl2Si2 semimetal. The transport properties could be well understood in connection with the two-band model, agreeing well with the theoretical calculations indicating four main sheets of Fermi surface consisting of three hole pockets centered at the Γ point and one electron pocket centered at the M p…
We have measured Hall effect, magnetotransport and magnetostriction on the field induced phases of single crystalline UPt$_2$Si$_2$ in magnetic fields up to 60\,T at temperatures down to 50\,mK. For the magnetic field applied along the $c$ axis we observe strong changes in the Hall effect at the phase boundaries. From a comparison to band structure calculations utilizing the concept of a dual nature of the uranium 5$f$ electrons, we find evidence for field induced topological changes of the Fermi surface due to at least one Lifshitz transition. Furthermore, we find a unique history dependence …
Electron gases at the surfaces of (001), (110), and (111) oriented SrTiO3 (STO) have been created using Ar+-irradiation with fully metallic behavior and low-temperature-mobility as large as 5500 cm2V-1s-1, 1300 cm2V-1s-1 and 8600 cm2V-1s-1 for (001)-, (110)-, and (111)-surfaces, respectively. The in-plane anisotropic magnetoresistance (AMR) have been studied for the samples with the current along different crystal axis directions to subtract the Lorentz Force effect. The AMR shows features which coincide with the fixed orientations to the crystalline axes, with 4-fold, 2-fold and nearly-6-fold…
The relative significance of quantum conductivity correction and magnetic nature of electrons in understanding the intriguing low-temperature resistivity minimum and negative magnetoresistance of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces has been a long outstanding issue since its discovery. Here we report a comparative magnetotransport study on amorphous and oxygen-annealed crystalline LaAlO3/SrTiO3 heterostructures at a relatively high-temperature range, where the orbital scattering is largely suppressed by thermal fluctuations. Despite of a predominantly negative out-of-p…
EuB$_6$ is a magnetic semiconductor in which defects introduce charge carriers into the conduction band with the Fermi energy varying with temperature and magnetic field. We present experimental and theoretical work on the electronic magnetotransport in single-crystalline EuB$_6$. Magnetization, magnetoresistance and Hall effect data were recorded at temperatures between 2 and 300 K and in magnetic fields up to 5.5 T. The negative magnetoresistance is well reproduced by a model in which the spin disorder scattering is reduced by the applied magnetic field. The Hall effect can be separated into…
The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In good metals, Boltzmann's theory predicts a quadratic growth in magnetoresistance (MR) at low B, and saturation at high fields. On the other hand, a number of nonmagnetic materials with weak electronic correlation and low carrier concentration for metallicity, such as inhomogeneous conductors, semimetals, narrow gap semiconductors and topologic…
We report the magnetic properties of two Eu based compounds, single crystalline EuIrGe$_3$ and EuRhGe$_3$, inferred from magnetisation, electrical transport, heat capacity and $^{151}$Eu Mössbauer spectroscopy. These previously known compounds crystallise in the non-centrosymmetric, tetragonal, $I4mm$, BaNiSn$_3$-type structure. Single crystals of EuIrGe$_3$ and EuRhGe$_3$ were grown using high temperature solution growth method using In as flux. EuIrGe$_3$ exhibits two magnetic orderings at $T_{\rm N1}$ = 12.4 K, and $T_{\rm N2}$ = 7.3 K. On the other hand EuRhGe$_3$ presents a single magneti…
A new class of materials termed topological insulators have been intensively investigated due to their unique Dirac surface state carrying dissipationless edge spin currents. Recently, it has been theoretically proposed that the three dimensional analogue of this type of band structure, the Weyl Semimetal phase, is materialized in pyrochlore oxides with strong spin-orbit coupling, accompanied by all-in-all-out spin ordering. Here, we report on the fabrication and magnetotransport of Eu2Ir2O7 single crystalline thin films. We reveal that one of the two degenerate all-in-all-out domain structure…
Controlling the stacking of van der Waals (vdW) materials is found to produce exciting new findings, since hetero- or homo- structures have added the diverse possibility of assembly and manipulated functionalities. However, so far, the homostructure with a twisted angle based on the magnetic vdW materials remains unexplored. Here, we achieved a twisted magnetic vdW Fe3GeTe2/Fe3GeTe2 junction with broken crystalline symmetry. A clean and metallic vdW junction is evidenced by the temperature-dependent resistance and the linear I-V curve. Unlike the pristine FGT, a plateau-like magnetoresistance …
Complex magnetic phase diagrams in Tb$_2$IrAl$_4$Ge$_2$ and Er$_2$IrAl$_4$Ge$_2$
Materials Science and Technology Division, Oak Ridge National Laboratory（橡树岭国家实验室）；Faculty of Applied Physics and Mathematics and Advanced Materials Centre, Gdansk University of Technology（格但斯克理工大学应用物理与数学学院及先进材料中心）
