arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1602.02547cond-mat.str-elphysics.chem-ph
收藏

占位嵌入理论中的局域密度近似

Local density approximation in site-occupation embedding theory

Bruno Senjean, Masahisa Tsuchiizu, Vincent Robert, Emmanuel Fromager

摘要:

占位嵌入理论(SOET)是一种基于密度泛函理论(DFT)的方法,旨在模拟强关联电子。它原则上是精确的,适用于模型和量子化学哈密顿量。这里给出了哈伯德哈密顿量的理论。与传统的DFT方法相比,SOET中的位置(或轨道)占据是从由一个(或多个)杂质位置和非相互作用浴位置组成的部分相互作用系统中推导出来的。浴的相关能量,然后处理隐式的占位功能。本文提出了一种基于二能级哈伯德模型的简单的杂质占据泛函近似,称为二能级杂质局域密度近似(2L-ILDA)。在一个典型的均匀8位Hubbard环上得到的结果是有希望的。目前正在将该方法扩展到更大的系统和更复杂的模型哈密顿。

英文摘要:

Site-occupation embedding theory (SOET) is a density-functional theory (DFT)-based method which aims at modelling strongly correlated electrons. It is in principle exact and applicable to model and quantum chemical Hamiltonians. The theory is presented here for the Hubbard Hamiltonian. In contrast to conventional DFT approaches, the site (or orbital) occupations are deduced in SOET from a partially-interacting system consisting of one (or more) impurity site(s) and non-interacting bath sites. The correlation energy of the bath is then treated implicitly by means of a site-occupation functional. In this work, we propose a simple impurity-occupation functional approximation based on the two-level (2L) Hubbard model which is referred to as two-level impurity local density approximation (2L-ILDA). Results obtained on a prototypical uniform 8-site Hubbard ring are promising. The extension of the method to larger systems and more sophisticated model Hamiltonians is currently in progress.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑