具有用于光学逻辑门和光学放大的多个独立选通控制的光效应晶体管（LET）
Light-effect transistor (LET) with multiple independent gating controls for optical logic gates and optical amplification
摘要：
现代电子学正在开发电子光学集成电路，而它们的电子主干，例如场效应晶体管（FET），保持不变。然而，进一步的FET缩小面临物理和技术挑战。光效应晶体管（LET）在组件级提供电子-光学混合，其可以通过采用光学选通和光电导性将摩尔定律延续到量子区域，而不需要FET的制造复杂性，例如物理栅极和掺杂。因此，容易实现多个独立的门，以实现独特的功能，而不增加芯片空间。在这里，我们报告LET器件的特性和新颖的数字和模拟应用，如光学逻辑门和光放大。基于CdSe纳米线的原型LET显示出类似于先进FET的输出和传输特性，例如，开/关比高达约1.0x10^6，源漏电压约为1.43 V，栅极功率约为260 nW，亚阈值摆幅约为0.3 nW/decade（不包括损耗）。我们的工作提供了新的电子光学集成策略和电子和光学计算方法。
英文摘要：
Modern electronics are developing electronic-optical integrated circuits, while their electronic backbone, e.g. field-effect transistors (FETs), remains the same. However, further FET down scaling is facing physical and technical challenges. A light-effect transistor (LET) offers electronic-optical hybridization at the component level, which can continue Moore's law to the quantum region without requiring a FET's fabrication complexity, e.g. a physical gate and doping, by employing optical gating and photoconductivity. Multiple independent gates are therefore readily realized to achieve unique functionalities without increasing chip space. Here we report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs show output and transfer characteristics resembling advanced FETs, e.g. on/off ratios up to ~1.0x10^6 with a source-drain voltage of ~1.43 V, gate-power of ~260 nW, and subthreshold swing of ~0.3 nW/decade (excluding losses). Our work offers new electronic-optical integration strategies and electronic and optical computing approaches.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
