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arXiv 1601.01437cond-mat.mes-hall
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Ga2S2纳米带的电子结构和边缘效应

Electronic structures and edge effects of Ga2S2 nanoribbons

Bao-Ji Wang, Xiao-Hua Li, Li-Wei Zhang, Guo-Dong Wang, San-Huang Ke

摘要:

采用从头算密度泛函理论计算了具有锯齿形和扶手椅形两种边缘的硫化镓纳米带(Ga 2S 2-NR)的电子性质和相对稳定性.研究发现,纳米带的电子性质对边缘结构非常敏感。锯齿形纳米带(Ga 2S 2-ZNR)是金属的自旋极化边缘状态,无论H-钝化,而裸扶手椅的(Ga 2S 2-ANRs)是半导体的间接带隙。该带隙随着宽度的增加呈现振荡行为,并最终收敛到一个恒定值。类似的行为也被发现在H-饱和的Ga 2S 2-ANRs,虽然带隙收敛到一个更大的值。裸ANRs和ZNR的相对稳定性进行了研究,通过计算它们的结合能。结果发现,对于类似的宽度ANRs比ZNR更稳定,并且两者都比具有稳定构型的Ga 2S 2纳米团簇更稳定。

英文摘要:

Ab initio density functional theory calculations are carried out to predict the electronic properties and relative stability of gallium sulfide nanoribbons (Ga2S2-NRs) with either zigzag- or armchair-terminated edges. It is found that the electronic properties of the nanoribbons are very sensitive to the edge structure. The zigzag nanoribbons (Ga2S2-ZNRs) are metallic with spin-polarized edge states regardless of the H-passivation,whereas the bare armchair ones (Ga2S2-ANRs) are semiconducting with an indirect band gap. This band gap exhibits an oscillation behavior as the width increases and finally converges to a constant value. Similar behavior is also found in H-saturated Ga2S2-ANRs, although the band gap converges to a larger value. The relative stabilities of the bare ANRs and ZNRs are investigated by calculating their binding energies. It is found that for a similar width the ANRs are more stable than the ZNRs, and both are more stable than some Ga2S2 nanocluters with stable configurations.

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