硅中精确放置施主的射频反射和电荷传感
Radio frequency reflectometry and charge sensing of a precision placed donor in silicon
摘要：
我们比较了硅中使用射频反射测量与隧道耦合水库和直流电荷感测使用电容耦合单电子晶体管（SET）的确定性的单个P施主上的电荷跃迁。通过测量通过SET的电导，并将其与来自储层的反射RF激发的相移进行比较，我们可以区分SET沟道内的电荷转移和供体与储层之间的隧穿。RF测量允许在每个电荷简并点处观察施主电子跃迁，这与SET电导信号相反，SET电导信号中仅在三相点处观察到电荷跃迁。隧道耦合库具有大的有效杠杆臂（~35%）的优点，允许我们独立地提取中性供体充电能量~62 +/-17 meV。这些结果表明，我们可以取代三个终端晶体管由一个单一的终端色散水库，高带宽可扩展的施主控制和读出的前景。
英文摘要：
We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET). By measuring the conductance through the SET and comparing this with the phase shift of the reflected RF excitation from the reservoir, we can discriminate between charge transfer within the SET channel and tunneling between the donor and reservoir. The RF measurement allows observation of donor electron transitions at every charge degeneracy point in contrast to the SET conductance signal where charge transitions are only observed at triple points. The tunnel coupled reservoir has the advantage of a large effective lever arm (~35%) allowing us to independently extract a neutral donor charging energy ~62 +/- 17meV. These results demonstrate that we can replace three terminal transistors by a single terminal dispersive reservoir, promising for high bandwidth scalable donor control and readout.
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