铁磷族化合物超导体LiFeAs结构二维氧化物拓扑绝缘体
Two-Dimensional Oxide Topological Insulator With Iron-Pnictide Superconductor LiFeAs Structure
摘要：
通过第一性原理计算，我们认为ZrSiO可以看作是一种三维氧化物弱拓扑绝缘体（TI），而它的单层是一种带隙高达30 meV的二维氧化物TI.计算的声子谱的单层ZrSiO表明，它是动态稳定的，在生长氧化物与原子精度的实验成果，确保它可以很容易地合成。这将导致基于TI的新型器件，即所谓的“拓扑电子”器件，其在室温下操作并且当暴露在空气中时稳定。因此，一个新的领域“拓扑电子学”将出现。另一个有趣的事情是这种氧化物2D TI具有与众所周知的铁-磷属元素化物超导体LiFeAs相似的晶体结构。这为实现超导体和TI的结合带来了巨大的希望，为各种非凡的量子现象铺平了道路，如拓扑超导体和Majorana模式。我们进一步发现，还有许多其他的同构化合物具有相似的电子结构，并形成了一个$WHM$ -家族，其中$W$是Zr，Hf或La，$H$是IV族或V族元素，而$M$是VI族元素。
英文摘要：
By using first-principles calculations, we propose that ZrSiO can be looked as a three-dimensional (3D) oxide weak topological insulator (TI) and its single layer is a long-sought-after 2D oxide TI with a band gap up to 30 meV. Calculated phonon spectrum of the single layer ZrSiO indicates it is dynamically stable and the experimental achievements in growing oxides with atomic precision ensure that it can be readily synthesized. This will lead to novel devices based on TIs, the so called "topotronic" devices, operating under room-temperature and stable when exposed in the air. Thus, a new field of "topotronics" will arise. Another intriguing thing is this oxide 2D TI has the similar crystal structure as the well-known iron-pnictide superconductor LiFeAs. This brings great promise in realizing the combination of superconductor and TI, paving the way to various extraordinary quantum phenomena, such as topological superconductor and Majorana modes. We further find that there are many other isostructural compounds hosting the similar electronic structure and forming a $WHM$-family with $W$ being Zr, Hf or La, $H$ being group IV or group V element, and $M$ being group VI one.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
