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arXiv 1507.08712cond-mat.mtrl-scicond-mat.mes-hallmath-phmath.MPphysics.comp-ph
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经验紧束缚中的表面钝化

Surface Passivation in Empirical Tight Binding

Yu He, Yaohua Tan, Zhengping Jiang, Michael Povolotskyi, Gerhard Klimeck, Tillmann Kubis

摘要:

经验紧束缚(TB)方法被广泛应用于原子器件模拟。现有的钝化悬挂键的TB方法分为两类:1)明确包括钝化原子的方法仅限于用原子和小分子钝化。2)方法并不区分钝化原子类型。这项工作介绍了一种隐式钝化方法,适用于任何钝化方案与适当的参数。该方法被应用到Si量子阱和Si超薄体晶体管氧化与SiO2在几个氧化配置。与从头算结果和实验结果的比较验证了该方法的有效性。氧化配置,严重妨碍晶体管的性能被确定。它还表明,常用的隐式H原子钝化高估了晶体管的性能。

英文摘要:

Empirical Tight Binding (TB) methods are widely used in atomistic device simulations. Existing TB methods to passivate dangling bonds fall into two categories: 1) Method that explicitly includes passivation atoms is limited to passivation with atoms and small molecules only. 2) Method that implicitly incorporates passivation does not distinguish passivation atom types. This work introduces an implicit passivation method that is applicable to any passivation scenario with appropriate parameters. This method is applied to a Si quantum well and a Si ultra-thin body transistor oxidized with SiO2 in several oxidation configurations. Comparison with ab-initio results and experiments verifies the presented method. Oxidation configurations that severely hamper the transistor performance are identified. It is also shown that the commonly used implicit H atom passivation overestimates the transistor performance.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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