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arXiv 1507.07424physics.ins-det
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超导隧道结单光子探测器集成读出电路用FD-SOI MOSFET放大器的研制

Development FD-SOI MOSFET amplifiers for integrated read-out circuit of superconducting-tunnel-junction single-photon-detectors

Kenji Kiuchi, Shinhong Kim, Yuji Takeuchi, Kenichi Takemasa, Kazuki Nagata, Kota Kasahara, Koya Moriuchi, Ren Senzaki, Shunsuke Yagi, Hirokazu Ikeda, Shuji Mats… 展开作者

Kenji Kiuchi, Shinhong Kim, Yuji Takeuchi, Kenichi Takemasa, Kazuki Nagata, Kota Kasahara, Koya Moriuchi, Ren Senzaki, Shunsuke Yagi, Hirokazu Ikeda, Shuji Matsuura, Takehiko Wada, Hirokazu Ishino, Atsuko Kibayashi, Hiromi Sato, Satoru Mima, Takuo Yoshida, Ryuta Hirose, Yukihiro Kato, Masasi Hazumi, Yasuo Arai, Ikuo Kurachi, Erik Ramgerg, Mark Kozlovsky, Paul Rubinov, Dmitri Sergatskov, Soo-Bong Kim, Shigetomo Shiki, Masahiro Ukibe, Go Fujii, Masataka Okubo

摘要:

提出了一种新的用于宇宙中微子辐射衰变研究的高分辨单光子红外光谱仪(C $ν$ B)。超导隧道结(STJ)被用作单个光子计数器件。每个STJ由Nb/Al/Al ${}_{\mathrm{x}}$ O ${}_{\mathrm{y}}$ /Al/Nb层组成,并且它们的厚度针对由${}^{3}$ He吸附制冷机冷却的370 mK的操作温度进行了优化。我们的STJ实现了250 pA的漏电流,测量数据表明,更小的面积STJ满足我们的要求。采用FD-SOI MOSFET对STJ信号电流进行放大,以提高信噪比。FD-SOI MOSFET可以在370 mK的低温下工作,这降低了信号放大系统的噪声。在低温下测量了FD-SOI MOSFET的特性。Id-Vgs曲线随阈值电压的升高而变陡,Id-Vds曲线在低温下呈非线性。考虑到这些影响,FD-SOI MOSFET可用于STJ探测器的读出电路。STJ探测器的偏置电压为0.4 mV,必须很好地稳定才能提供高性能。提出了一种基于FD-SOI MOSFET的电荷集成放大器的设计,作为STJ探测器的读出电路。使用SPICE仿真估计放大器中使用的运算放大器的要求。运算放大器需要具有快速响应(GBW $\geq$ 100 MHz),并且与冰箱的冷却功率相比,它必须具有低功耗。

英文摘要:

We proposed a new high resolution single photon infrared spectrometer for search for radiative decay of cosmic neutrino background(C$ν$B). The superconducting-tunnel-junctions(STJs) are used as a single photoncounting device. Each STJ consists of Nb/Al/Al${}_{\mathrm{x}}$O${}_{\mathrm{y}}$/Al/Nb layers and their thicknesses are optimized for the operation temperature at 370 mK cooled by a ${}^{3}$He sorption refrigerator. Our STJs achieved the leak current 250 pA and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio(S/N). FD-SOI MOSFETs can be operated at cryogenic temperature of 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on with a higher threshold voltage and the Id-Vds curve shows a non linear shape in linear region at cryogenic temperature. Taking into account these effects, FD-SOI MOSFETs are available for read-out circuit of STJ detectors. The bias voltage for STJ detectors are 0.4 mV and it must be well stabilized to deliver high performance. We proposed an FD-SOI MOSFET based charge integrated amplifier design as a read-out circuit of STJ detectors. The requirements for an operational amplifier used in the amplifier is estimated using SPICE simulation. The op-amp required to have a fast response(GBW$\geq$100 MHz) and it must have low power dissipation as compared to the cooling power of refrigerator.

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