异质结构对称性与量子Hall向列相的取向
Heterostructure Symmetry and the Orientation of the Quantum Hall Nematic Phases
摘要：
GaAs/AlGaAs异质结中的清洁二维电子系统在高朗道能级占有率和低温下表现出各向异性的集体相，即量子霍尔向列相。一个迄今未知的原生的破胶电位一致地定向这些阶段相对于宿主材料的晶轴。在这里，我们报告了一组广泛的测量检查的异质结构的结构对称性的作用，在确定向列相的方向。在单量子阱样品中，我们发现，无论是局部对称性的限制势，也不是电子系统和样品表面之间的距离决定的取向的电子束。在显着的对比，对于二维电子局限在一个单一的异质界面之间的GaAs和AlGaAs，的取向依赖于样品表面下的二维电子系统的深度。
英文摘要：
Clean two-dimensional electron systems in GaAs/AlGaAs heterostructures exhibit anisotropic collective phases, the quantum Hall nematics, at high Landau level occupancy and low temperatures. An as yet unknown native symmetry-breaking potential consistently orients these phases relative to the crystalline axes of the host material. Here we report an extensive set of measurements examining the role of the structural symmetries of the heterostructure in determining the orientation of the nematics. In single quantum well samples we find that neither the local symmetry of the confinement potential nor the distance between the electron system and the sample surface dictates the orientation of the nematic. In remarkable contrast, for two-dimensional electrons confined at a single heterointerface between GaAs and AlGaAs, the nematic orientation depends on the depth of the two-dimensional electron system beneath the sample surface.
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