栅控双层石墨烯褶皱处的拓扑限制态
Topologically confined states at corrugations of gated bilayer graphene
摘要：
我们研究了具有一个波纹层的门控双层石墨烯的电子和输运性质，这导致了堆叠的AB/BA边界。当一个栅极电压被施加到一个层，拓扑保护的间隙状态出现在该层，这揭示了作为强大的传输通道沿堆叠边界。随着量子阱尺寸的增加，出现了更局域化的量子阱态。这些有限大小的状态也是导电的沿折叠，但在相反的堆叠边界状态，这是无间隙的，他们提出了一个间隙。我们还研究了双层石墨烯中的周期性波纹;我们的研究结果表明，AB-和BA-堆叠区域之间的这种波纹表现为导电通道，可以很容易地通过它们的形状来识别。
英文摘要：
We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear at the corrugation, which reveal as robust transport channels along the stacking boundary. With increasing size of the corrugation, more localized, quantum-well-like states emerge. These finite-size states are also conductive along the fold, but in contrast to the stacking boundary states, which are gapless, they present a gap. We have also studied periodic corrugations in bilayer graphene; our findings show that such corrugations between AB- and BA-stacked regions behave as conducting channels that can be easily identified by their shape.
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