We demonstrate injection-locking of 120mW laser diodes operating at 397nm. We achieve stable operation with injection powers of ~100uW and a slave laser output power of up to 110mW. We investigate the spectral purity of the slave laser light via photon scattering experiments on a single trapped Ca40 ion. We show that it is possible to achieve a scattering rate indistinguishable from that of monochromatic light by filtering the laser light with a diffraction grating to remove amplified spontaneous emission.
We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power of 40 mW and another laser diode for amplifying the laser power up to 220 mW by injection locking. The systematic method for optimization of our injection locking can also be applied to high power light sources at any other wavelengths. Our system, which does not depend on complex nonlinear frequency-doubling, has great importance for implementing transportab…
We report on the generation of 500 mW of spectrally pure laser light at the 460.86 nm transition used for laser cooling of strontium atoms. To this end we inject a high power single mode laser diode with light from a stabilized extended cavity diode laser. To optimize and monitor the injection status and the spectral purity of the slave diode we developed a novel technique that uses a single passive optical element. A narrow band interference filter generates a suitable monitoring signal without any additional electronics for post processing of the data. Our method greatly simplifies the daily…
We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance…
Two cw single-mode violet (397nm) diode lasers are locked to a single external-cavity master diode laser by optical injection locking. A double-pass 1.6GHz acousto-optic modulator is used to provide a 3.2GHz offset frequency between the two slave lasers. We achieve up to 20mW usable output in each slave beam, with as little as 25 μW of injection power at room temperature. An optical heterodyne measurement of the beat note between the two slave beams gives a linewidth of <=10Hz at 3.2GHz. We also estimate the free-running linewidth of the master laser to be approximately 3MHz, by optical hetero…
A phase modulated RF current source is applied to an injection locked diode laser operating at $780\unit{nm}$. This produces tunable phase modulated sidebands of the laser suitable for stabilizing the length of an optical transfer cavity using the Pound-Drever-Hall technique. The Pound-Drever-Hall signal is anti-symmetric about the lock point, despite the presence of significant diode laser amplitude modulation. The stabilized optical transfer cavity is used to frequency stabilize a 776 nm external cavity diode laser. The stability and tunability of this transfer cavity locked laser is establi…
Injection locking of diode lasers is commonly used to amplify low power laser light, but is extremely sensitive to perturbations in the laser current and temperature. To counter such perturbations, active stabilization is often applied to the current of the injection locked diode. We observe that the diode laser's polarization extinction ratio (PER) greatly increases when injection locked, and therefore the PER provides a measure of injection lock quality. We report robust active stabilization of a diode laser injection lock based on the PER, demonstrating the technique at 399 nm wavelength wh…
It is demonstrated that RF current modulation of a frequency stabilized injection-locked diode laser allows the stabilization of an optical cavity to adjustable lengths, by variation of the RF frequency. This transfer cavity may be used to stabilize another laser at an arbitrary wavelength, in the absence of atomic or molecular transitions suitable for stabilization. Implementation involves equipment and techniques commonly used in laser cooling and trapping laboratories, and does not require electro- or acousto-optic modulators. With this technique we stabilize a transfer cavity using a RF cu…
We report a novel optical pulse generation method for high-speed wavelength switching of amplified nanosecond (ns) laser pulses resonant to atomic transitions.Under free-running condition, a slave laser diode is blue-detuned with tens of GHz relative to the master laser. A ns pulse chain generated by modulating the continuous-wave master laser with a fiber-pigtailed electro-optical intensity modulator is injected into the slave laser diode to fast switch the slave laser's wavelength back and forth. The output beam of slave laser is filtered by a temperature-controlled etalon to get the amplifi…
We generate 555.8nm light with sub-MHz linewidth through the use of laser injection-locking of a semiconductor diode at 1111.6nm, followed by frequency doubling in a resonant cavity. The integrity of the injection lock is investigated by studying an offset-beat signal between slave and master lasers, by performing spectroscopy on the $(6s)^{2}$ $^{1}S_{0}-\,(6s6p)$ $^{3}P_{1}$ transition in magneto-optically trapped ytterbium, and by demonstrating additional laser cooling of $^{171}$Yb with the 555.8nm light. For the $^{1}S_{0}-$ $^{3}P_{1}$ spectroscopy, we confirm the linear dependence betwe…
We study the injection locking bistability of a specially engineered two-color semiconductor Fabry-Perot laser. Oscillation in the uninjected primary mode leads to a bistability of single mode and two-color equilibria. With pulsed modulation of the injected power we demonstrate an all-optical memory element based on this bistability, where the uninjected primary mode is switched with 35 dB intensity contrast. Using experimental and theoretical analysis, we describe the associated bifurcation structure, which is not found in single mode systems with optical injection.
We show that nonlinear dynamics in diode lasers with optical injection leads to frequency tunable microwave sidebands which are suitable for atomic physics experiments. We demonstrate the applicability of the sidebands in an experiment where rubidium atoms are magneto-optically trapped with both the trap and the re-pump optical frequencies derived from one optically injected laser. We find linewidth narrowing in the optical spectrum of the injected laser at both the injection frequency and the sideband frequency. With strong optical injection which leads to frequency locking we find a complete…
We studied the injection-locking properties of a resonant-tunneling-diode terahertz oscillator in the small-signal injection regime with a frequency-stabilized continuous THz wave. The linewidth of the emission spectrum dramatically decreased to less than 120 mHz (HWHM) from 4.4 MHz in the free running state as a result of the injection locking. We experimentally determined the amplitude of injection voltage at the antenna caused by the injected THz wave. The locking range was proportional to the injection amplitude and consistent with Adler's model. As increasing the injection amplitude, we o…
In this paper, we present an experimental study of the metrological stabilization of a solid-state frequency comb for embedded metrology applications. The comb is a passively mode-locked laser diode based on InGaAs/InP Quantum-dash structure emitting optical lines into a 9 nm bandwidth centered at 1.55 $μ$m with a repetition rate of 10.09 GHz. The frequency stabilization is achieved by optical injection locking of the comb with an external cavity laser diode referenced onto a metrological frequency standard. One observes the transfer of the spectral purity from the injection laser to the neigh…
Broad area laser diodes are attractive for the high optical power they can produce. Unfortunately, this high power normally comes at the cost of severely reduced spatial coherence since the wide area of the semiconductor wave-guide is inherently spatially multi-mode (in the slow axis). We demonstrate a method to majorly improve the spatial coherence of a high-power broad-area diode laser by placing it in an external cavity that is mode selective. We design the cavity, such that the diode aperture acts as its own spatial filter, obviating the need for an intra-cavity slit-filter, and optimally …
We experimentally observed self-injection locking regime of the gain-switched laser to high-Q optical microresonator. We revealed that comb generated by the gain-switched laser experiences a dramatic reduce of comb teeth linewidths in this regime. We demonstrated the Lorentzian linewidth of the comb teeth of sub-kHz scale as narrow as for non-switched self-injection locked laser. Such setup allows generation of high-contrast electrically-tunable optical frequency combs with tunable comb line spacing in a wide range from 10 kHz up to 10 GHz. The characteristics of the generated combs were studi…
Broad aperture semiconductor lasers usually suffer from low spatial quality of the emitted beams. Due to the highly compact character of such lasers the use of a conventional intra-cavity spatial filters is problematic. We demonstrate that extremely compact Photonic Crystal spatial filters, incorporated into the laser resonator, can improve the beam spatial quality, and correspondingly, increase the brightness of the emitted radiation. We report the decrease of the M2 from 47 down to 28 due to Photonic Crystal spatial intra-cavity filtering, and the increase of the brightness by a factor of 1.…
We developed a simple three-stage amplifying tunable cw diode laser system that comprises: a Littrow configuration master laser, frequency stabilized with a dichroic atomic vapor laser lock (DAVLL), an acousto-optic frequency shifter (AOM), an injection-locked slave laser and a tapered amplifier (TA). Slave amplifies the frequency-shifted beam and suppresses (within 0.5%) the strong dependence of its intensity on the AOM carrier frequency, thus acting as an efficient optical limiter. The beam is further amplified in TA. System operates at 780 nm, with an output power above 700 mW, a time-avera…
V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of V-pits. In this paper, regularly arranged V-pits are formed on c-plane GaN grown by metal organic vapor phase epitaxy on conventional c-plane cone-patterned sapphire substrates. The size of V-pits and area of flat GaN can be adjusted by changing growth temperature. Five pairs of InGaN/GaN multi-quantumwell and also a light-emitting diode structure are grown o…
We report a dual-frequency injection-locked continuous-wave near-infrared laser. The entire system consists of a Ti:sapphire ring laser as a power oscillator, two independent diode-lasers employed as seed lasers, and a master cavity providing a frequency reference. Stable dual-frequency injection-locked oscillation is achieved with a maximum output power of 2.8 W. As fundamental performance features of this laser system, we show its single longitudinal/transverse mode characteristics and practical power stability. Furthermore, as advanced features, we demonstrate arbitrary selectivity of the t…
We numerically investigate the effect of phase-amplitude coupling modulation on power spectra in semiconductor lasers subject to optical injection in a face to face configuration, when a non-negligible injection delay time is taken into account. We find that as phase-amplitude coupling factor alpha varies, the system goes through a sequence of phase transactions between In-phase locking states to anti-phase locking states via phase-flip bifurcation. Moreover, we observed the signature of frequency discretization (Frequency Island) and uncovered the physical mechanism for the existence of multi…
Self-injection locking of a diode laser to a high-quality-factor microresonator is widely used for frequency stabilization and linewidth narrowing. We constructed several microresonator-based laser sources with measured instantaneous linewidths of 1 Hz and used them for investigation and implementation of the self-injection locking effect. We studied analytically and experimentally the dependence of the stabilization coefficient on tunable parameters such as locking phase and coupling rate. It was shown that precise control of the locking phase allows fine tuning of the generated frequency fro…
The design of a 671 nm diode laser with a mode-hop-free tuning range of 40 GHz is described. This long tuning range is achieved by simultaneously ramping the external cavity length with the laser injection current. The external cavity consists of a microscope cover slip mounted on piezoelectric actuators. In such a configuration the laser output pointing remains fixed, independent of its frequency. Using a diode with an output power of 5-7 mW, the laser linewidth was found to be smaller than 30 MHz. This cover slip cavity and feedforward laser current control system is simple, economical, robu…
We present a painless, almost-free upgrade to present extended cavity diode lasers (ECDLs), which improves the long term mode-hop free performance by stabilizing the resonance of the internal cavity to the external cavity. This stabilization is based on the observation that the frequency or amplitude noise of the ECDL is lowest at the optimum laser diode temperature or injection current. Thus, keeping the diode current at the level where the noise is lowest ensures mode-hop free operation within one of the stable regions of the mode chart, even if these should drift due to external influences.…
We numerically investigate the complex nonlinear dynamics for two independently coupled laser systems consisting of (i) mutually delay-coupled edge emitting diode lasers and (ii) injection-locked quantum nano-structures lasers. A comparative study in dependence on the dynamical role of alpha parameter, which determine the phase-amplitude coupling of the optical field, in both the cases is probed. The variation of alpha lead to conspicuous changes in the dynamics of both the systems, which are characterized and investigated as a function of optical injection strength for the fixed coupled-cavit…
We report temperature-dependent current-voltage (I - V - T) and output light power-voltage or current (P - V - T) or (P - I - T) characteristics of 1550 nm tunneling injection quantum dot (TI QD) laser diodes. Experimental data is accompanied by physical models that distinguish between different current flow and light emission mechanisms for different applied voltages and temperature ranges. Three exponential regimes in the I - V characteristics were identified for low bias levels where no optical radiation takes place. At the lowest bias levels, the diffusion-recombination mechanism based on …
Self-injection locking to a high-quality-factor microresonator is a key component of various up-to-date photonic applications, including compact narrow-linewidth lasers and microcomb sources. For optimal construction of such devices it is necessary to know the parameters of the locking mode, which is a challenging task. We developed and verified experimentally an original technique based on the fundamentals of the self-injection locking effect, which allows determining the key parameters of the mode of the microresonator (quality factor, vertical index) as well as laser diode parameters. We de…
Diode laser self-injection locking (SIL) to a whispering gallery mode of a high quality factor resonator is a widely used method for laser linewidth narrowing and high-frequency noise suppression. SIL has already been used for the demonstration of ultra-low-noise photonic microwave oscillators and soliton microcomb generation and has a wide range of possible applications. Up to date, SIL was demonstrated only with a single laser. However, multi-frequency and narrow-linewidth laser sources are in high demand for modern telecommunication systems, quantum technologies, and microwave photonics. He…
We report on the characterization of the timing stability of passively mode-locked discrete mode diode laser sources. These are edge-emitting devices with a spatially varying refractive index profile for spectral filtering. Two devices with a mode-locking frequency of 100 GHz are characterized. The first device is designed to support a comb of six modes and generates near Fourier limited 1.9 ps pulses. The second supports four primary modes resulting in a sinusoidal modulation of the optical intensity. Using a cross-correlation technique, we measured a 20 fs pulse to pulse timing jitter for th…
We demonstrate passive harmonic mode-locking of a quantum well laser diode designed to support a discrete comb of Fabry-Perot modes. Spectral filtering of the mode spectrum was achieved using a non-periodic patterning of the cavity effective index. By selecting six modes spaced at twice the fundamental mode spacing, near-transform limited pulsed output with 2 ps pulse duration was obtained at a repetition rate of 100 GHz.
We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency regimes for the self-injection locked diode. The device exhibits 44 dB side-mode-suppression-ratio and mW output power. Detailed frequency noise analysis reveals sub-MHz integrated linewidth and 16 kHz intrinsic linewidth. Such a narrow linewidth laser diode in the near-UV domain with a compact and low-cost design could find applications whenever coherency and …
Unbalanced charge injection is deleterious for the performance of colloidal quantum dot (CQD) light emitting diodes (LEDs) as it deteriorates the quantum efficiency (QE), brightness and operational lifetime. CQD LEDs emitting in the infrared have previously achieved high quantum efficiencies but only when driven to emit in the low radiance regime. At higher radiance levels, required for practical applications, the efficiency decreased dramatically in view of the notorious efficiency droop. Here we report a novel methodology to regulate charge supply in multinary bandgap CQD composites that fac…
We describe a high-power, frequency-tunable, external cavity diode laser (ECDL) system near 626 nm useful for laser cooling of trapped $^9$Be$^+$ ions. A commercial single-mode laser diode with rated power output of 170 mW at 635 nm is cooled to $\approx - 31$ C, and a single longitudinal mode is selected via the Littrow configuration. In our setup, involving multiple stages of thermoelectric cooling, we are able to obtain $\approx$130 mW near 626 nm, sufficient for efficient frequency doubling to the required Doppler cooling wavelengths near 313 nm in ionized Beryllium. In order to improve no…
An extended cavity diode laser operating in the Littrow configuration emitting near 657 nm is stabilized via its injection current to a reference cavity with a finesse of more than 10^5 and a corresponding resonance linewidth of 14 kHz. The laser linewidth is reduced from a few MHz to a value below 30 Hz. The compact and robust setup appears ideal for a portable optical frequency standard using the Calcium intercombination line.
Narrow linewidth lasers and optical frequency combs generated with mode-locked lasers revolutionized optical frequency metrology. The advent of soliton Kerr frequency combs in compact crystalline or integrated ring optical microresonators opens new horizons for applications. These combs, as was naturally assumed, however, require narrow-linewidth single-frequency pump lasers. We demonstrate that a regular multi-frequency Fabry-Perot laser diode self-injection locked to an optical whispering gallery mode (WGM) microresonator can be first efficiently transformed to a single-frequency ultra-narro…
We study the degree of second-order coherence of the emission of a high-power multi-quantum well superluminescent diode with a lateral tapered amplifier section with and without feedback. When operated in an external cavity, the degree of second-order coherence changed from the almost thermal case of g$^{(2)}$(0)$\approx$1.9 towards the mostly coherent case of g$^{(2)}$(0)$\approx$1.2 when the injection current at the tapered section was increased. We found good agreement with semi-classical laser theory near and below threshold while above laser threshold a slightly higher g$^{(2)}$(0) was ob…
We investigate zero-lag synchronization (ZLS) between delay-coupled diode lasers system with mutual optical injection in a face-to-face configuration. We observed numerical evidence of such ZLS without using any relay element or mediating laser. In addition, simulation also demonstrate that this kind of robust ZLS occurs around the phase flip transition regimes where in-phase and anti-phase oscillations coexist due to delayed coupling induced modulation of the phase-amplitude coupling factor α. Our finding could be implemented in highly secured optical communication network as well as the unde…
Optical detection and spectroscopy of single molecules has become an indispensable tool in biological imaging and sensing. Its success is based on fluorescence of organic dye molecules under carefully engineered laser illumination. In this paper we demonstrate optical detection of single molecules on a wide-field microscope with an illumination based on a commercially available, green light-emitting diode. The results are directly compared with laser illumination in the same experimental configuration. The setup and the limiting factors, such as light transfer to the sample, spectral filtering…
We report the first efficient trapping of rare-earth Yb atoms with a high-power violet laser diode (LD). An injection-locked violet LD with a 25 mW frequency-stabilized output was used for the magneto-optical trapping (MOT) of fermionic as well as bosonic Yb isotopes. A typical number of $4\times 10^6$ atoms for $^{174}$Yb with a trap density of $\sim 1\times10^8/$cm$^3$ was obtained. A 10 mW violet external-cavity LD (ECLD) was used for the one-dimensional (1D) slowing of an effusive Yb atomic beam without a Zeeman slower resulting in a 35-fold increase in the number of trapped atoms. The ove…
We demonstrate the physical generation of random bits at high bit rates (> 100 Gb/s) using optical chaos from a solitary laser diode and therefore without the complex addition of either external optical feedback or injection. This striking result is obtained despite the low dimension and relatively small bandwidth of the laser chaos, i.e. two characteristics that have been so far considered as limiting the performances of optical chaos-based applications. We unambiguously attribute the successful randomness at high speed to the physics of the laser chaotic polarization dynamics and the resulti…
Vertical cavity Surface Emitting Laser (VCSEL) diodes emit light in two polarization modes. The amount of optical feedback is found to influence the intensities of the emitted modes. We investigate the effect of the amount of total output polarization feedback and polarization selective feedback on the intensities of the two emitted polarization modes. A 40 micro seconds resolution time series correlation analysis is done for different feedback conditions and investigate the power spectral continuity and onset of chaos on two polarization modes
We present a simple, robust, narrow-linewidth, frequency-doubled semiconductor laser source suitable for laser cooling and repumping of $^9$Be$^+$ ions. A distributed Bragg reflector (DBR) laser diode operating at 626 nm is self-injection-locked to a frequency doubling cavity via phase-stabilised optical feedback when the laser is resonant with the cavity mode. The short-term laser instability is reduced from the MHz-level to approximately 20 kHz by the injection process, thus eliminating the need for a high-bandwidth feedback loop to suppress the otherwise troublesome high-frequency laser noi…
A proposal for an all-optical memory based on a bistability of single-mode states in a dual-mode diode laser with time-delayed optical feedback is presented. The system is modeled using a multimode extension of the Lang-Kobayashi equations with injected optical pulses. We uncover the bifurcation structure by deriving analytical expressions for the boundaries of the bistable region and demonstrate how the delay time in the external cavity determines an optimal pulse duration for efficient switching of the memory element. We also show the relevant role played by gain saturation and by the dual-m…
A new method for measuring the linewidth enhancement factor of a laser is proposed. It is based on frequency-modulated optical injection, combined with dual-frequency laser operation. The linewidth enhancement factor α is deduced from the experimental data using a theoretical analysis based on a standard rate equation model. As the intracavity power is kept constant, the method allows to free the process from the thermal effects that are usually present in AM/FM techniques. Measurement of α=0.28$\pm$0.04 in a diode-pumped Nd:YAG laser demonstrates that the method is well-suited for characteriz…
Laser injection locking and nanophotonic spectral translation of electro-optic frequency combs
National Institute of Standards and Technology（美国国家标准与技术研究院）；University of Maryland（马里兰大学）；Joint Quantum Institute, NIST/University of Maryland（NIST/马里兰大学联合量子研究所）
Surface plasmonic effects of metallic particles have been known to be an effective method to improve the performance light emitting didoes. In this work, we reported the sputtered Au nanoparticles enhanced electroluminescence in inverted quantum dot light emitting diodes (ITO/Au NPs/ZnMgO/QDs/TFB/PEDOT:PSS/Al). By combining the time-resolved photoluminescence, transient electroluminescence and ultraviolet photoelectron spectrometer measurements, the enhancement can be explained to the internal field enhanced exciton coupling to surface plasmons and the increased electron injection rate with Au…
