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arXiv 1504.07540cond-mat.mes-hall
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Landau能级谱揭示石墨烯的局域和全局屏蔽特性

Local and Global Screening Properties of Graphene Revealed through Landau Level Spectroscopy

Chih-Pin Lu, Martin Rodriguez-Vega, Guohong Li, Adina Luican-Mayer, K. Watanabe, T. Taniguchi, Enrico Rossi, Eva Y. Andrei

摘要:

单原子厚的晶体层和它们的垂直异质结构承载着设计电子材料的希望,这是标准生长技术无法实现的。为了实现其潜力,有必要将其与环境干扰,特别是由基材引入的环境干扰隔离。但是,寻找和表征合适的底物,并最大限度地减少它们引入的随机电位波动,一直是这个新兴领域的一个持续挑战。在这里,我们表明,朗道能级(LL)光谱是精致的本地和全球的长度尺度上的潜在波动敏感。利用这种技术,我们证明了插入一个中间石墨烯层提供了优越的屏蔽衬底诱导的干扰,超过一倍的电子平均自由path.Further,我们发现,接近hBN作为一个纳米级的真空吸尘器,显着抑制全球潜在的波动。这使得在标准SiO2衬底上制造高质量器件成为可能。

英文摘要:

One-atom thick crystalline layers and their vertical heterostructures carry the promise of designer electronic materials that are unattainable by standard growth techniques. In order to realize their potential it is necessary to isolate them from environmental disturbances in particular those introduced by the substrate. But finding and characterizing suitable substrates, and minimizing the random potential fluctuations they introduce, has been a persistent challenge in this emerging field. Here we show that Landau-level (LL) spectroscopy is exquisitely sensitive to potential fluctuations on both local and global length scales. Harnessing this technique we demonstrate that the insertion of an intermediate graphene layer provides superior screening of substrate induced disturbances, more than doubling the electronic mean free path. Furthermore, we find that the proximity of hBN acts as a nano-scale vacuum cleaner, dramatically suppressing the global potential fluctuations. This makes it possible to fabricate high quality devices on standard SiO2 substrates.

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