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arXiv 1504.07401cond-mat.mes-hall
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非Rashba自旋轨道相互作用表面的非常规自旋态理论

Theory of Unconventional Spin States in Surfaces with Non-Rashba Spin-Orbit Interaction

Kokin Nakajin, Shuichi Murakami

摘要:

在Tl/Si(111)和Bi/Si(111)中的表面态显示非Rashba型自旋分裂。我们研究这些表面态的自旋输运性质。首先,我们构建紧束缚哈密顿Tl/Si和Bi/Si表面,尊重晶体学对称性。其结果是,我们发现负责非Rashba自旋分裂的Tl/Si表面哈密顿量的特定条款。使用这个模型,我们计算电流诱导的自旋极化的Tl/Si的哈密顿量,以查看非Rashba自旋轨道相互作用的效果。我们发现,诱导自旋极化是在平面内和垂直于电流,这是与Rashba系统相同。我们发现它是由晶体学对称性决定的。此外,我们在Bi/Si系统和Tl/Si系统中数值计算发现了自旋轨道相互作用参数符号不同的两个表面区域之间的结处的束缚态。我们解释这些数值结果与我们的分析计算的结果。

英文摘要:

Surface states in Tl/Si(111) and Bi/Si(111) show non-Rashba-type spin splitting. We study spin-transport properties in these surface states. First we construct tight-binding Hamiltonians for Tl/Si and Bi/Si surfaces, which respect crystallographic symmetries. As a result, we find specific terms in the Tl/Si surface Hamiltonian responsible for non-Rashba spin splitting. Using this model we calculate current-induced spin polarization in the Tl/Si Hamiltonian in order to see the effect of non-Rashba spin-orbit interaction. We found that the induced spin polarization is in-plane and perpendicular to the current, which is consequently the same with Rashba systems. We find that it follows from crystallographic symmetries. Furthermore, we numerically find bound states at the junction between two surface regions which have different signs of the spin-orbit interaction parameters in the Bi/Si system and in the Tl/Si system. We explain these numerical results with the results of our analytical calculations.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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