拓扑晶体绝缘体表面的磁性诱导
Inducing magnetism onto the surface of a topological crystalline insulator
摘要：
在拓扑晶体绝缘体（TCI）上引入磁性可以产生多种新的量子电磁效应。这是高度应变敏感的带拓扑结构的这种安全保护系统的结果。因此，我们表明，放置TCI表面的SnTe在接近EuS，铁磁绝缘体，在SnTe和EuS之间的界面处诱导磁性，从而打破了TCI中的时间反演对称性。SnTe-EuS-SnTe三层器件的磁输运实验揭示了TCI表面电阻的滞后降低与磁畴壁密度的增加相一致。这种额外的传导可能是畴壁内拓扑保护表面态的特征。此外，一个滞后的异常霍尔效应揭示了通常在平面内的磁矩的EuS层是倾斜向垂直方向在界面处。这些结果是在SnTe-EuS界面处的感生磁性导致TCI中的时间反演对称性被破坏的证据。
英文摘要：
Inducing magnetism onto a topological crystalline insulator (TCI) has been predicted to result in several novel quantum electromagnetic effects. This is a consequence of the highly strain-sensitive band topology of such symmetry-protected systems. We thus show that placing the TCI surface of SnTe in proximity to EuS, a ferromagnetic insulator, induces magnetism at the interface between SnTe and EuS and thus breaks time-reversal-symmetry in the TCI. Magnetotransport experiments on SnTe-EuS-SnTe trilayer devices reveal a hysteretic lowering of the resistance at the TCI surface that coincides with an increase in the density of magnetic domain walls. This additional conduction could be a signature of topologically-protected surface states within domain walls. Additionally, a hysteretic anomalous Hall effect reveals that the usual in-plane magnetic moment of the EuS layer is canted towards a perpendicular direction at the interface. These results are evidence of induced magnetism at the SnTe-EuS interfaces resulting in broken time-reversal symmetry in the TCI.
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