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arXiv 1504.01622cond-mat.str-el
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高温超导铜氧化物中电子分布的不均匀性

Inhomogeneous Electronic Distribution in High-Tc Cuprates

Shigeru Koikegami, Masaru Kato, Takashi Yanagisawa

摘要:

在Hartree-Fock近似下,基于具有层状结构的三维三带哈伯德模型,对高温铜氧化物半填充区两侧电子态的掺杂演化进行了理论研究.一旦少量的空穴或电子被掺杂到半满状态,我们的模型表现出电荷转移绝缘体到金属的转变以及化学势跳跃。同时,掺杂的空穴或电子分布不均匀,并且它们倾向于在半填充附近形成团簇。这表明,在金属和绝缘区域之间的分离的微观相分离的可能性。

英文摘要:

We theoretically investigate the doping evolution of the electronic state of high-Tc cuprate on both sides of the half-filling on the basis of the three-dimensional three-band Hubbard model with a layered structure using the Hartree-Fock approximation. Once a small amount of holes or electrons are doped into the half-filled state, our model exhibits the charge-transfer insulator-to-metal transition along with a chemical potential jump. At the same time, the doped holes or electrons are inhomogeneously distributed, and they tend to form clusters in the vicinity of the half-filling. This suggests the possibility of microscopic phase separation with the separation between the metallic and the insulating regions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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