加速开发CuSbS2薄膜光伏器件原型
Accelerated development of CuSbS2 thin film photovoltaic device prototypes
摘要：
替代薄膜光伏技术的发展是一个重要的研究课题，由于低成本，高效率的太阳能电池的大规模制造的潜力。尽管有大量有前途的替代吸收体和相应的接触，但进展速度受到太阳能电池制造过程中出现的复杂性的限制。一个潜在的解决方案，这个问题是高通量的组合方法，已被广泛用于研究和开发的个人吸收和接触材料。在这里，我们展示了一种加速的方法来开发的薄膜光伏器件原型的基础上的新型CuSbS 2吸收剂，使用的设备架构采用CuInxGa（1-x）Se 2（CIGS）。新开发的三阶段，自我调节的CuSbS 2生长过程，使光伏器件的性能趋势的研究作为相纯度，晶体取向，吸收层厚度的函数，和众多的背接触。这种探索导致初始CuSbS 2器件原型具有约1%的转换效率;目前受限于由于光激发电子的收集不良而导致的低短路电流，以及由于CuSbS 2/CdS界面处的悬崖型导带偏移而导致的小开路电压（由第一性原理计算建议）。总之，这些结果说明了组合方法的潜力，以加速薄膜光伏器件与新型吸收剂的发展。
英文摘要：
Development of alternative thin film photovoltaic technologies is an important research topic due to the potential for low-cost, large-scale fabrication of high-efficiency solar cells. Despite the large number of promising alternative absorbers and corresponding contacts, the rate of progress is limited by complications that arise during solar cell fabrication. One potential solution to this problem is the high-throughput combinatorial method, which has been extensively used for research and development of individual absorber and contact materials. Here, we demonstrate an accelerated approach to development of thin film photovoltaic device prototypes based on the novel CuSbS2 absorber, using the device architecture employed for CuInxGa(1-x)Se2 (CIGS). The newly developed three-stage, self-regulated CuSbS2 growth process enables the study of PV device performance trends as a function of phase purity, crystallographic orientation, layer thickness of the absorber, and numerous back contacts. This exploration results in initial CuSbS2 device prototypes with ~1% conversion efficiency; currently limited by low short-circuit current due to poor collection of photoexcited electrons, and a small open-circuit voltage due to a cliff-type conduction band offset at the CuSbS2/CdS interface (suggested by first-principles calculations). Overall, these results illustrate the potential of combinatorial methods to accelerate the development of thin film photovoltaic devices with novel absorbers.
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