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arXiv 1503.06253cond-mat.mtrl-scicond-mat.mes-hall
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石墨烯作为p型金属用于最终微型化

Graphene as a p-type metal for ultimate miniaturization

Francesca Iacopi, Tim Gould, John J. Boeckl, Neeraj Mishra, Dayle Goding, Aiswarya Pradeepkumar, Benjamin V. Cunning, Barry Wood, Ryan E. Brock, Reinhold H. Dau… 展开作者

Francesca Iacopi, Tim Gould, John J. Boeckl, Neeraj Mishra, Dayle Goding, Aiswarya Pradeepkumar, Benjamin V. Cunning, Barry Wood, Ryan E. Brock, Reinhold H. Dauskardt, Sima Dimitrijev

摘要:

我们报道了具有异常高的~$10^{15}$ $cm^{-2}$空穴浓度和宏观尺度上前所未有的20 - 25 Ω/平方的薄层电阻的高导电双层石墨烯的宏观片,并且在硅衬底上的分子氧的薄垫上原位获得。这种特定配置的电气和电子特性在热退火和暴露于空气数月后保持稳定。我们进一步报告了一个互补的从头算研究,预测石墨烯粘附能的增强高达20倍,也支持实验断裂测试。我们的研究结果表明,石墨烯的显着性能可以实现在一个可靠的方式使用高通量的过程。除了提供卓越的材料性能外,我们采用的生长工艺可扩展到大面积,因此石墨烯的出色导电性能可以在通过传统半导体制造工艺制造的器件中得到利用。我们预计,该方法将为石墨烯纳米科学和技术领域的未来发展提供必要的可扩展性和可靠性,特别是在进一步小型化受到经典导体的尺寸效应和电气可靠性阻碍的领域。

英文摘要:

We report macroscopic sheets of highly conductive bilayer graphene with exceptionally high hole concentrations of ~ $10^{15}$ $cm^{-2}$ and unprecedented sheet resistances of 20-25 Ω per square over macroscopic scales, and obtained in-situ over a thin cushion of molecular oxygen on a silicon substrate. The electric and electronic properties of this specific configuration remain stable upon thermal anneals and months of exposure to air. We further report a complementary ab-initio study, predicting an enhancement of graphene adhesion energy of up to a factor 20, also supported by experimental fracture tests. Our results show that the remarkable properties of graphene can be realized in a reliable fashion using a high-throughput process. In addition to providing exceptional material properties, the growth process we employed is scalable to large areas so that the outstanding conduction properties of graphene can be harnessed in devices fabricated via conventional semiconductor manufacturing processes. We anticipate that the approach will provide the necessary scalability and reliability for future developments in the graphene nanoscience and technology fields, especially in areas where further miniaturization is hampered by size effects and electrical reliability of classical conductors.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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