Engineering of quantum dot photon sources via electro-elastic fields
Rinaldo Trotta, Armando Rastelli
备注：
to appear as a book chapter in a compilation "Engineering the Atom-Photon Interaction" published by Springer in 2015, edited by A. Predojevic and M. W. Mitchell
The possibility to generate and manipulate non-classical light using the tools of mature semiconductor technology carries great promise for the implementation of quantum communication science. This is indeed one of the main driving forces behind ongoing research on the study of semiconductor quantum dots. Often referred to as artificial atoms, quantum dots can generate single and entangled photons on demand and, unlike their natural counterpart, can be easily integrated into well-established optoelectronic devices. However, the inherent random nature of the quantum dot growth processes results in a lack of control of their emission properties. This represents a major roadblock towards the exploitation of these quantum emitters in the foreseen applications. This chapter describes a novel class of quantum dot devices that uses the combined action of strain and electric fields to reshape the emission properties of single quantum dots. The resulting electro-elastic fields allow for control of emission and binding energies, charge states, and energy level splittings and are suitable to correct for the quantum dot structural asymmetries that usually prevent these semiconductor nanostructures from emitting polarization-entangled photons. Key experiments in this field are presented and future directions are discussed.
A semiconductor quantum dot can generate highly coherent and indistinguishable single photons. However, intrinsic semiconductor dephasing mechanisms can reduce the visibility of two-photon interference. For an electron in a quantum dot, a fundamental dephasing process is the hyperfine interaction with the nuclear spin bath. Here we directly probe the consequence of the fluctuating nuclear spins on the elastic and inelastic scattered photon spectra from a resident electron in a single dot. We find the nuclear spin fluctuations lead to detuned Raman scattered photons which are distinguishable fr…
Due to Klein tunneling in graphene only quasi-bound states are realized in graphene quantum dots by electrostatic gating. Particles in the quasi-bound states are trapped inside the dot for a finite time and they keep bouncing back and forth till they find their way out. Here we study the effect of an induced gap on the scattering problem of Dirac electrons on a circular electrostatically confined quantum dot. Introducing an energy gap inside the quantum dot enables us to distinguish three scattering regimes instead of two in the case of gapless graphene quantum dot. We will focus on these regi…
Interactions between electrons can strongly affect the shape and functionality of multi-electron quantum dots. The resulting charge distributions can be localized, as in the case of Wigner molecules, with consequences for the energy spectrum and tunneling to states outside the dot. The situation is even more complicated for silicon dots, due to the interplay between valley, orbital, and interaction energy scales. Here, we study two-electron wavefunctions in electrostatically confined quantum dots formed in a SiGe/Si/SiGe quantum well at zero magnetic field, using a combination of tight-binding…
Trapping electrons in quantum dots and controlling their collective quantum states is crucial for converting semiconductor structures into bits of quantum information processing. Here, we study single- and two-particle states in quantum dots formed in gapped bilayer graphene (BLG), where the electron's valley states appear in pair with their spin quantum number and we analyse spin- and valley-singlet and triplet states for various BLG and dot parameters, as well as two-particle interaction strength and external magnetic field.
Analysis of electron localization in a coupled quantum dot structure via variational approach: numerical results and application in quantum-dot cellular automata
