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arXiv 1502.00236cond-mat.str-el
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分数拓扑绝缘体:从滑动Luttinger液体到Chern-Simons理论

Fractional Topological Insulators: from sliding Luttinger Liquids to Chern-Simons theory

Raul A. Santos, Chia-Wei Huang, Yuval Gefen, D. B. Gutman

摘要:

采用滑动Luttinger液体(LL)方法研究分数拓扑绝缘体(FTI).我们表明,FTI是现实的自旋-轨道和电子-电子相互作用的理论的低能不动点。我们发现,拓扑相位属于存在的相互作用,打破了自旋不变性和它的边界,甚至延长了这些条款。最后,我们证明了LL中的一维手征反常导致FTI态有效规范理论中拓扑Chern-Simons项的出现。

英文摘要:

The sliding Luttinger liquids (LL) approach is applied to study fractional topological insulators (FTI). We show that FTI is the low energy fixed point of the theory for realistic spin-orbit and electron-electron interaction. We find that the topological phase pertains in the presence of interaction that breaks the spin invariance and its boundaries are even extended by those terms. Finally we show that one dimensional chiral anomaly in the LL leads to the emergence of topological Chern-Simons terms in the effective gauge theory of the FTI state.

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