We report fabrication and characteristics of an organic monolayer based Metal Oxide Semiconductor (MOS) device. In place of SiO2 oxide layer in the MOS configuration, we used 1H, 1H, 2H, 2H- perfluorooctyl trichlorosilane (FOTS) self-assembled monolayer as a substitution. The MOS device was fabricated by simple steps like sputter deposition and dip coating method. The device was heat treated to different temperatures to understand its performance and efficiency for high temperature application. The MOS device was heated to 150° C, 350°C and 550°C and the energy band gap was found to be varied in the order 2.5 eV, 3.0 eV and 3.4eV respectively. For non-heated sample, the energy band gap is 3.4 eV. The results shows that the parameters like charge mobility (μ), energy band gap, and resistance were found to be decreased after the heat treatment. The change in the energy band gap due to heat treatment has significantly influenced the I-V and the impedance characteristics. We observed that the MOS device started to conduct between 1V to 3V, further the device conduct till 20V. Impedance analysis show that device heated to 350 °C shows the low impedance but the impedance starts to increase for further heating up to 550°C. Using Multi Dielectric Energy Band Diagram Program (MEBDP) we studied the MOS structure and C-V characteristics and temperature dependent behavior of the devices from 100K to 600K. Our experimental work and simulation studies confirm that the FOTS SAM substituted MOS device could be used for high temperature applications. The experimental observations are well supported by the simulation results. This study shows that the FOTS organic monolayer are promising substitute for SiO2 oxide layer in the MOS and MOSFET which could be used high temperature applications.
Deterministic and Scalable Quantum Light Generation in DNA Origami-Programmed Organic Molecule-MoS$_2$ Monolayer Hybrids
Ludwig-Maximilians-Universität München（慕尼黑大学）；Munich Center for Quantum Science and Technology (MCQST)（慕尼黑量子科学与技术中心）；Carl von Ossietzky University（卡尔·冯·奥西茨基大学）；Skolkovo Institute of Science and Technology（斯科尔科沃科学技术研究所）；National Institute for Materials Science（日本国立材料研究所）
Quantum Anomalous Hall Effect in $d^{10}$ Oxide Monolayers
University of Science and Technology of China（中国科学技术大学）；Hefei National Laboratory, University of Science and Technology of China（合肥国家实验室，中国科学技术大学）；Institute of Artificial Intelligence, Hefei Comprehensive National Science Center（合肥综合性国家科学中心人工智能研究院）；Fuzhou University（福州大学）
Controlling electronic, magnetic, thermal, and optical properties of boron-nitrogen codoped strontium oxide monolayer: Activation of optical transitions in the VL region
Tuning exciton emission via ferroelectric polarization at a heterogeneous interface between a monolayer transition metal dichalcogenide and a perovskite oxide membrane
Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticles-polythiophene hybrid materials
Super-transport of Excitons in Atomically Thin Organic Semiconductors at the 2D Quantum Limit
相干激子的长距离快速输运对于发展高速激子电路和量子计算应用具有重要意义。然而，这些相干激子中的大多数仅在与腔耦合时在一些低维半导体中观察到，因为在材料的原生状态下，激子输运存在大的不均匀加宽和退相效应。在这里，通过将相干激子限制在2D量子极限，我们首次观察到分子聚集使激子在原子级薄的二维（2D）有机半导体中在相干态之间的超传输成为可能，在室温下测得的高效激子扩散系数为346.9 cm 2/sec。该值比其他有机分子聚集体和低维无机材料的报道值高一到几个数量级。在没有耦合到任何光学腔的情况下，单层并五苯样品，一个非常干净的2D量子系统，（1.2 nm厚），具有高结晶度（J型聚集）和最小界面态，显示出来自Frenkel激子的超辐射发射，这通过温度依赖的光致发光（PL）发射，高度增强的辐射衰减速率，显著窄化的PL峰宽和强定向的面内发射。单层并五苯样品中的相干性被观察到在135个分子上离域，这显著大于从其他有机薄膜观察到的值（几个分子）。此外，在单层并五苯样品中的激子的超输运表现出高度各向异性的行为。我们的研究结果为未来高速激子电路，快速OLED和其他光电器件的发展铺平了道路。
Single monolayer ferromagnetic perovskite SrRuO3 with high conductivity and strong ferromagnetism
NTT Basic Research Laboratories, NTT Corporation（NTT基础实验室，NTT公司）；The University of Tokyo（东京大学）；Hiroshima University（广岛大学）；Japan Synchrotron Radiation Research Institute (JASRI)（日本同步辐射研究所）
Revealing the Physico-Chemical Basis of Organic Solid-Solid Wetting Deposition: Casimir-Like Forces, Hydrophobic Collapse, and the Role of the Zeta Potential
