重新审视自旋场效应晶体管：多重反射、非弹性散射和横向尺寸效应
Revisit the spin-FET: Multiple reflections, inelastic scattering, and lateral size effects
摘要：
我们重新审视自旋注入场效应晶体管（spin-FET）通过模拟晶格模型的基础上递归格点格林函数方法。在一维相干区，模拟结果与著名的Datta-Das模型有明显的差别，从而改进了处理方法，得到了解析的和推广的结果。模拟还使我们能够解决非弹性散射（使用Büttiker的虚拟水库的方法）和横向约束效应的控制自旋，这是在自旋FET器件的重要问题。
英文摘要：
We revisit the spin-injected field effect transistor (spin-FET) by simulating a lattice model based on recursive lattice Green's function approach. In the one-dimensional case and coherent regime, the simulated results reveal noticeable differences from the celebrated Datta-Das model, which motivate thus an improved treatment and lead to analytic and generalized result. The simulation also allows us to address inelastic scattering (using Büttiker's fictitious reservoir approach) and lateral confinement effects on the control of spins which are important issues in the spin-FET device.
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