AI 中文总结
本文提出一种基于SrTiO3的共面横向门控MoS2场效应晶体管架构，利用高介电常数和量子顺电特性增强栅耦合，减少界面无序，为低功耗二维电子学和低温量子器件提供统一平台。
AI 中文摘要
原子级薄的过渡金属二硫属化物（如MoS2）因其优异的静电控制和抗短沟道效应能力，为超越硅的缩放极限提供了一条有前景的途径。实现这一潜力关键取决于栅极堆叠工程，即必须在实现强栅耦合的同时不损害原始的二维界面。在此，我们展示了一种直接在单晶SrTiO3上制造的MoS2场效应晶体管的共面横向门控架构。SrTiO3极高的介电常数增强了栅极-沟道耦合。共面几何结构无需单独的栅极绝缘体，减少了界面无序。由于量子顺电特性，SrTiO3的介电常数在冷却时增加，增强了栅极耦合，导致阈值电压和亚阈值摆幅降低，这一效应与传统场效应晶体管架构形成对比。无介电层的MoS2表面结合增强的静电控制，使该架构成为低功耗二维电子学和低温量子器件的有前景平台。
英文摘要
Atomically thin transition-metal dichalcogenides, such as MoS2, offer a promising route to surpass the scaling limits of silicon owing to their excellent electrostatic control and resilience to short-channel effects. Realizing this potential depends critically on gate-stack engineering, where strong gate coupling must be achieved without compromising the pristine two-dimensional interface. Here, we demonstrate a coplanar lateral-gating architecture for MoS2 field-effect transistors fabricated directly on single-crystal SrTiO3. The exceptionally high permittivity of SrTiO3 enhances gate-channel coupling. The coplanar geometry eliminates the need for a separate gate insulator, reducing interface disorder. Owing to the quantum paraelectric nature, the SrTiO3 dielectric constant increases upon cooling, enhancing the gate coupling, leading to a decrease in threshold voltage and subthreshold swing an effect that contrasts with conventional FET architectures. The dielectric-free MoS2 surface, combined with enhanced electrostatic control, makes this architecture a promising platform for low-power two-dimensional electronics and cryogenic quantum devices.
