（Ga，Mn）As光激发磁化旋进开始时的磁化强度和载流子动力学
Dynamics of magnetization and carriers at the onset of the photo-excited precession of magnetization in (Ga,Mn)As
摘要：
利用泵浦探测技术测量了（Ga，Mn）As的时间分辨磁光响应和瞬态微分反射率，研究了（Ga，Mn）As的光激发磁化旋进。在小于1 ps的时间区域内，观察到快速振荡和尖峰信号，分别与激发的GaAs带隙以下和以上。与旋磁模型和自相关函数的分析得出结论，这些信号不是由于超快退磁，但由于泵和探测脉冲之间的干扰，结合亚ps载流子动力学特性的低温生长的半导体。Mn离子（Mn ~（2+）-> Mn ~（3+））的光电离被认为是动态诱导轨道角动量并影响（Ga，Mn）As中空穴介导磁各向异性的机制。
英文摘要：
Photo-excited precession of magnetization in (Ga,Mn)As is investigated by measuring time-resolved magneto-optical response and transient differential reflectivity with pump-and-probe technique. In the time region less than 1 ps, rapidly oscillating and spike-like signals are observed, respectively, with excitation of below and above the GaAs band gap. Analysis with gyromagnetic model and autocorrelation function concludes that those signals are not attributed to ultrafast demagnetization but due to interference between pump and probe pulses incorporating sub-ps carrier dynamics characteristic of low-temperature grown semiconductors. Photo-ionization of Mn ions (Mn2+ -> Mn3+) is proposed as a mechanism which dynamically induces orbital angular momentum and affects hole-mediated magnetic anisotropy in (Ga,Mn)As.
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