位错滤波器的设计规则
Design rules for dislocation filters
摘要：
应变层穿透位错过滤器结构在单晶外延层中的功效使用（001）面心立方材料（例如GaAs或Si（1-x）Ge（x））和（0001）六方材料（例如GAN）的数值建模来评估。我们发现，螺纹位错密度指数衰减的应变释放的函数，无论是移动的螺纹位错的分数。在（001）立方材料中，螺纹位错之间的反应倾向于产生一种平衡的混合物，即移动和固定的位错。相比之下，在（0001）GAN中，移动的穿透位错倾向于非常迅速地损失，通常不移动的位错密度很少或没有减少。螺纹位错相互作用的捕获半径估计约为。40 nm，使用截面透射电子显微镜的位错过滤结构的GaAs单片生长在Si上。我们发现，在任何给定的结构中可以获得的最小穿透位错密度可能受到动力学效应的限制，约为。每平方厘米1.0e+04至1.0e+05。
英文摘要：
The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si(1-x)Ge(x), and (0001) hexagonal materials such as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threading dislocations that are mobile. Reactions between threading dislocations tend to produce a population that is a balanced mixture of mobile and sessile in (001) cubic materials. In contrast, mobile threading dislocations tend to be lost very rapidly in (0001) GaN, often with little or no reduction in the immobile dislocation density. The capture radius for threading dislocation interactions is estimated to be approx. 40nm using cross section transmission electron microscopy of dislocation filtering structures in GaAs monolithically grown on Si. We find that the minimum threading dislocation density that can be obtained in any given structure is likely to be limited by kinetic effects to approx. 1.0e+04 to 1.0e+05 per square cm.
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