arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 1406.3095cond-mat.mtrl-scicond-mat.mes-hall
收藏

单层WSe2中的紧束缚激子

Tightly bound excitons in monolayer WSe2

Keliang He, Nardeep Kumar, Liang Zhao, Zefang Wang, Kin Fai Mak, Hui Zhao, Jie Shan

摘要:

利用线性吸收光谱和双光子光致发光光谱研究了二硒化钨(WSe 2)单分子膜中激子的结合能和激发态。激子束缚能为0.37eV,比III-V族半导体量子阱中的激子束缚能大一个数量级,室温下也能观察到激子的激发态。实验确定的单光子和双光子活性态的激子激发光谱是从简单的二维(2D)类氢模型不同。这一结果揭示了显着减少和非局部介电屏蔽的库仑相互作用在二维半导体。观察到的大激子结合能也将对基于2D原子晶体的下一代光子学和光电子学应用产生重大影响。

英文摘要:

Exciton binding energy and excited states in monolayers of tungsten diselenide (WSe2) are investigated using the combined linear absorption and two-photon photoluminescence excitation spectroscopy. The exciton binding energy is determined to be 0.37eV, which is about an order of magnitude larger than that in III-V semiconductor quantum wells and renders the exciton excited states observable even at room temperature. The exciton excitation spectrum with both experimentally determined one- and two-photon active states is distinct from the simple two-dimensional (2D) hydrogenic model. This result reveals significantly reduced and nonlocal dielectric screening of Coulomb interactions in 2D semiconductors. The observed large exciton binding energy will also have a significant impact on next-generation photonics and optoelectronics applications based on 2D atomic crystals.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑