arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1406.0261cond-mat.mtrl-sciphysics.comp-ph
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铰链结构诱导黑磷的特殊性质及提高热电性能的新策略

Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance

Guangzhao Qin, Qing-Bo Yan, Zhenzhen Qin, Sheng-Ying Yue, Hui-Juan Cui, Qing-Rong Zheng, Gang Su

摘要:

系统研究了应变下块体黑磷的几何、电子和热电性质。BP的铰链结构带来了不寻常的力学响应,如各向异性的杨氏模量和负泊松比。BP敏感的电子结构使其在应变下在金属、直接半导体和间接半导体之间发生转变。BP的$ZT$在$800\,\mathrm{K}$处的最大优值为0.72,通过施加适当的应变可以提高到0.87,表明BP可能是一种潜在的中高温TE材料。这种应变引起的TE性能的增强经常被观察到发生在直接-间接带隙转变的边界处,这可以归因于在转变点处的能谷的简并度的增加。通过比较BP和SnSe的结构,提出了一类具有铰链结构的TE材料。该研究不仅揭示了BP在应变下的各种新特性,而且为寻找更好的TE材料提出了有效的策略。

英文摘要:

We systematically investigated the geometric, electronic and thermoelectric (TE) properties of bulk black phosphorus (BP) under strain. The hinge-like structure of BP brings unusual mechanical responses such as anisotropic Young's modulus and negative Poisson's ratio. A sensitive electronic structure of BP makes it transform among metal, direct and indirect semiconductors under strain. The maximal figure of merit $ZT$ of BP is found to be 0.72 at $800\,\mathrm{K}$ that could be enhanced to 0.87 by exerting an appropriate strain, revealing BP could be a potential medium-high temperature TE material. Such strain-induced enhancements of TE performance are often observed to occur at the boundary of the direct-indirect band gap transition, which can be attributed to the increase of degeneracy of energy valleys at the transition point. By comparing the structure of BP with SnSe, a family of potential TE materials with hinge-like structure are suggested. This study not only exposes various novel properties of BP under strain, but also proposes effective strategies to seek for better TE materials.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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