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arXiv 1404.2198cond-mat.mes-hall
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拓扑绝缘体Bi2Se3表面的非弹性输运指纹:电子-声子耦合的作用

Fingerprints of Inelastic Transport at the Surface of the Topological Insulator Bi2Se3: Role of Electron-Phonon Coupling

M. V. Costache, I. Neumann, J. F. Sierra, V. Marinova, M. M. Gospodinov, S. Roche, S. O. Valenzuela

摘要:

本文报道了Bi $_{2}$ Se $_{3}$拓扑绝缘体剥离薄晶体中电场和温度相关的输运测量。在低温($< 50$ K)和化学势位于体隙内时,晶体电阻率是强烈的温度依赖性,反映非弹性散射由于光学声子的热激活。获得电流随电压的线性增加直到发生电流饱和的阈值。我们发现,激活行为,电压阈值和饱和电流都可以定量地解释考虑一个单一的光学声子模式与能量$\hbar Ω\approx 8$ meV。该声子模式与材料的表面态强烈相互作用,并且代表在高电场下表面处的主要散射源。

英文摘要:

We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of the current with voltage is obtained up to a threshold value at which current saturation takes place. We show that the activated behavior, the voltage threshold and the saturation current can all be quantitatively explained by considering a single optical phonon mode with energy $\hbar Ω\approx 8$ meV. This phonon mode strongly interacts with the surface states of the material and represents the dominant source of scattering at the surface at high electric fields.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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